Nanoinformatics TRIZ Cases

A highly doped interfacial layer cuts backside source/drain contact resistance, preserving low capacitance and boosting transistor drive current.

A backside dielectric-filled diffusion break uses isolation walls and residual nanolayers to block carrier flow between tightly packed GAA transistors.

U-shaped recess epitaxy avoids dislocation planes in nanosheet source-drain growth, preserving channel stress and carrier mobility.

Stacked nanostructures and selective source/drain contact vary channel width without enlarging substrate area, improving IC speed or power.

A low-resistivity doped interfacial layer cuts backside source/drain contact resistance and boosts drive current in dual-sided metallized transistors.

Sequential wet etching flattens a semiconductor cladding layer to under 3 nm top variation, widening the process window and cutting fab time.

A recessed bottom channel and isolation buffer cut GAA FET leakage while preventing bottom semiconductor layer exposure during etching.

A staged wet-to-dry anneal improves FCVD film purity, density, and etch resistance while limiting thermal budget in fin and nanosheet STI formation.

A source/drain void in stacked GAA transistors improves gate control and reduces leakage while fitting conventional fabrication flows.

A helmet structure shields the top active channel sheet during dummy gate etching, preserving channel integrity in stacked nanosheet devices.

A plasma-induced oxygen gradient lets inner spacers be selectively etched while limiting SiGe and Si oxidation, reducing material loss and variability.

Selective reversed tone patterning drives dipoles into chosen high-K gate dielectrics to form accurate multi-Vt regions without wafer-yield loss.

Selective backside channel removal creates semiconductor stacks with different channel counts, improving power performance without tighter scaling.

A recessed fin isolation layout with a field separation layer helps control short channel effects while preserving transistor stability in scaled devices.

Plasma oxidation of a sacrificial epitaxial layer forms dense silicon oxide on nanosheet channels, cutting leakage and parasitic capacitance.

Protection-layer selective etching forms recesses while preserving fin sidewalls, preventing source/drain merging in dense transistors.

A tuned gate overlap on the active pattern improves electrostatic control while limiting parasitic capacitance in scaled MOSFET structures.

Protruding field insulation separates multi-channel active fins so conductive layers can cross over with less dummy-gate capacitance and leakage.

Asymmetric CFET nanosheet and gate layout helps maintain process control, yield, and reliability as feature sizes shrink.

A wrapped gate links multiple nanosheet channel stacks to raise current conduction without giving up transistor integration density.

Un-doped SiGe sacrificial contacts enable precise PMD recess end-point detection and alignment for independently processed stacked NMOS and PMOS devices.

Alternating surface treatment and selective etching shapes multi-gate inner spacers precisely while protecting nanowires and channel length uniformity.

A graded source/drain dopant profile in multi-gate transistors suppresses leakage, limits out-diffusion, and lowers contact resistance for SRAM.

An isolation FET and back-side gate contact block substrate leakage in nanosheet FinFETs while preserving density and routing space.

Using 2D Dirac source material in IC channel and source regions enables cold electron injection to cut leakage current during device scaling.

A 2D CMG dielectric layout uses low-k material at gate ends to cut capacitance in scaled CFET cells while preserving performance.

Directed self-assembly creates self-aligned back-side gate vias and dielectric plugs that overcome wafer distortion and front/back misalignment.

Front-side-cut backside source/drain contacts separate power and signal routing, easing sub-10 nm scaling while reducing IR droop.

Front-side-guided backside source-drain contacts ease sub-10 nm interconnect congestion while simplifying fabrication and improving process margins.

Direct penetration contact to the first metal layer cuts interconnect resistance and improves reliability in stacked semiconductor chips.

Bottom dielectric isolation under GAA source/drain epitaxy blocks substrate leakage paths, reduces DIBL, and preserves carrier mobility.

Backside epitaxial source/drain regions expand contact area in scaled ICs, cutting contact resistance and improving switching speed.

Air gaps replace gate-cut dielectric between tightly spaced transistor features, cutting parasitic capacitance while supporting dense IC layouts.

Patterned stressor recesses add strain-based confinement to qubits, reducing gate complexity while improving valley splitting and quantum state stability.

A tapered dielectric fin with a helmet feature prevents source/drain merging in MBC transistors while limiting parasitic capacitance.

Oxide-based GAA channel layers improve electrostatic control and mobility as FinFET widths shrink, while enabling lower-temperature 3D IC integration.

A fin-top hard mask acts as an etch stop, enabling thinner dielectric protection, reduced fin pitch, and better semiconductor device speed.

Selective etch-resistant and capping layers enlarge interconnect contact area, cutting resistance while protecting dielectric integrity and limiting leakage.

A plasma-less hydrogen halide etchant forms high-aspect-ratio oxide trenches while protecting self-aligned contacts and spacer layers.

Different dielectrics fill CFET cavities and gate surfaces to preserve insulation while cutting parasitic capacitance for higher-frequency FET operation.

Vertical source/drain recesses enable larger backside contacts in scaled FETs, cutting routing complexity, contact resistance, and short risk.

A silicon-carbon STI layer resists etching and supports dense fins, reducing collapse risk while simplifying semiconductor fabrication.

Varying germanium in sacrificial nanosheets compensates etch non-uniformity, keeping nano-FET gate lengths uniform and reducing SiGe residue.

Sb/Bi-doped group IV source and drain epitaxy induces tensile strain in monocrystalline nanostructures to boost charge mobility with CFET-compatible processing.

Stacked SiGe source/drain epitaxy embeds dopant clusters to cut transistor contact resistance without excessive lateral structure growth.

An angled epitaxy cut increases source/drain contact area on both sides while maintaining isolation and lowering contact resistance.

Carbon-doped SiGe release layers and a tuned sacrificial layer improve CFET etch selectivity while preserving strain, mobility, and channel quality.