Direct-Bonded Optical Element Assembly for Beam-Shaping LEDs

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Solution Overview

Problem

The existing methods for assembling optical elements on radiation-emitting semiconductor chips are expensive, time-consuming, and complex, especially when high positioning accuracy is required, making them inefficient and unreliable.

Innovation Solution

A radiation-emitting semiconductor device with a semiconductor body and an optical element connected via a direct bonding connection, which eliminates the need for adhesive layers and allows for high-precision alignment and efficient production, enabling accurate and reliable beam shaping without absorption losses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If optical elements are individually assembled on radiation-emitting semiconductor chips, then beam shaping can be achieved, but the assembly process becomes expensive, time-consuming, and complex

Engineering Contradiction:
Improvebeam shaping accuracyVSAvoidassembly process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the optical element and semiconductor chip into a single integrated component during the epitaxial growth process. The optical element is formed as part of the semiconductor layer sequence on the same substrate, eliminating the need for separate assembly operations and reducing overall device complexity while maintaining beam shaping functionality

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The optical element is prepared and positioned on the substrate before the semiconductor layers are deposited during epitaxial growth. This preliminary positioning allows the optical element to be integrated into the final device structure without requiring complex post-growth assembly operations

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If adhesive layers are used to attach optical elements, then assembly is simplified, but absorption losses occur

Engineering Contradiction:
Improveassembly easeVSAvoidradiation absorption loss
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent removes the adhesive layer from the device structure entirely. The optical element is attached directly to the semiconductor substrate through the epitaxial growth process, creating a bond without any intermediate adhesive material that would absorb radiation

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The semiconductor substrate itself acts as the bonding intermediary between the optical element and the active region. Through epitaxial growth, the substrate directly bonds the optical element to the semiconductor layers without requiring any additional adhesive intermediary material

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If high positioning accuracy is required for optical elements, then beam shaping precision improves, but assembly time and cost increase

Engineering Contradiction:
Improveoptical element positioning accuracyVSAvoidassembly speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The optical element is positioned on the substrate with high precision before the semiconductor layers are deposited. The epitaxial growth process then locks this position in place, achieving high positioning accuracy without requiring slow, precision-adjustment assembly operations

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces mechanical assembly and positioning operations with an epitaxial growth process. The chemical deposition process naturally conforms to the positioned optical element, achieving high precision through material growth rather than mechanical adjustment

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The direct bonding connection between the semiconductor body and optical element ensures high reliability and accuracy over a wide temperature range, simplifying the assembly process and improving radiation properties while avoiding absorption losses.

Implementation Method 1

The optical element is intended in particular to shape, for example to focus, collimate or expand the radiation emitted from the active region

Methodology Applied
Scientific EffectRefraction: Refraction

Implementation Method 2

The optical element is intended in particular to shape, for example to focus, collimate or expand the radiation emitted from the active region

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 3

the connecting partners to be connected to one another, which are in particular prefabricated, are held together by atomic and/or molecular forces, in particular by means of hydrogen bonds

Methodology Applied
Scientific EffectHydrogen bonding: Hydrogenation

Implementation Method 4

the connecting partners to be connected to one another, which are in particular prefabricated, are held together by atomic and/or molecular forces, in particular by means of hydrogen bonds and/or Van der Waals interactions

Methodology Applied
Scientific EffectVan der Waals interaction: Van der Waals Force

Data Source

PatentUS11848406B2Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
Publication Date: 2023.12.19 AMS OSRAM INT GMBH
  • US11848406B2 patent drawing
  • US11848406B2 patent drawing
  • US11848406B2 patent drawing

AI summary

A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection.Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.