Semiconductor Lasers TRIZ Cases
- GaN Epitaxial Mask Window Structure for Dislocation Reduction
Layered mask windows drive lateral epitaxial growth that bends and stops dislocations, improving GaN epitaxial layer quality for power devices and LEDs.
- Optical Sensor Cap Structure for Ambient Light Shielding
A nested covering cap and peripheral adhesive layout block ambient and reflected light while preserving optical alignment and attachment reliability.
- Wavelength-Converting Frame Structure for Compact Light Emitters
An integrated wavelength-converting frame removes the separate transmissive member to shrink light-emitting packages without losing conversion efficiency.
- Laser Oscillator Snubber Circuit Without Resistor Heating
A diode-capacitor snubber stores surge energy from wiring inductance, enabling higher bypass-switch frequency without resistor heat or added size.
- Direct-Bonded Optical Element Assembly for Beam-Shaping LEDs
Direct bonding joins optical elements to LED semiconductor chips without adhesives, enabling precise beam shaping with lower loss and simpler assembly.
- Laser Oscillator Capacitor Pre-Charge Control After Emergency Stop
A discharge-time model sets only the needed capacitor pre-charge after emergency stop, cutting laser processing cycle delays.
- Core-Shell InGaN/AlGaN Quantum Nanowires for the Green Gap
Core-shell quantum nanowires cut defects and surface recombination, enabling stable, efficient green and amber InGaN emission.
- Curved Resonant Cavity Structure for Light-Emitting Devices
A pre-shaped concave epitaxial base enables a curved resonant cavity that improves light confinement and optoelectronic efficiency.
- Lateral Light-Receiving Package Layout for Secure Wavelength Conversion
A sealed package constrains the light receiving body to simplify substrate shaping, improve fixing accuracy, and prevent direct light leakage.
- Monolithic Coaxial Light Sensing Layout for Low-Loss LiDAR
Monolithic emitter and receiver integration removes extra optics, cutting light loss while improving object detection and distance measurement.
- Graded AlGaN Heterostructure for Reliable P-Type Hole Injection
A graded AlGaN electron-blocking and interlayer structure improves p-type hole injection while reducing nitrogen vacancies and hole trapping.
- Laser Pulse Peak Detection Using Shifted Control Signal Timing
Shifted control signal timing and stretched photodiode voltages capture femtosecond pulse peaks accurately without costly high-speed ADCs.
- Shaped Phosphor Member for Uniform Light Extraction
A multi-surface phosphor member improves light extraction, luminance, and color uniformity by aligning incident and emission surfaces.