Semiconductor Light-Emitting Device Rod Structure Stress Relief
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Solution Overview
Problem
Semiconductor light-emitting devices face challenges in achieving enhanced light emitting characteristics with a simple structure and low product defects, particularly due to compressive stress from substrates which can lead to defects and reduced luminous efficiency.
Innovation Solution
The semiconductor light-emitting device features a patterned first conductivity-type semiconductor layer with rods to relieve compressive stress, and a method of manufacturing involving a sacrificial layer and insulating spacer to form active layers and electrodes, improving light output and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor light-emitting device structure is used, then the device can be manufactured with a simple process, but compressive stress from the substrate causes defects and reduced luminous efficiency
Solution Approach 1:
The first conductivity-type semiconductor layer is divided into a plurality of rods spaced apart from each other, creating a segmented structure that relieves compressive stress from the substrate while maintaining electrical functionality. This segmentation allows stress to be distributed and reduced without compromising the overall device performance.
Solution Approach 2:
The insulating spacer is conformally formed to surround specific regions, providing localized stress relief and electrical insulation where needed. The spacer is positioned to cover portions of sidewalls of the second conductivity-type semiconductor layer, creating local quality improvements in stress management and electrical isolation.
2Reliability
If the first conductivity-type semiconductor layer is patterned into rods, then compressive stress is relieved and luminous efficiency improves, but the manufacturing process becomes more complex
Solution Approach 1:
The insulating spacer is formed conformally on the rods before the second conductivity-type semiconductor layer is deposited. This preliminary formation of the insulating spacer simplifies subsequent manufacturing steps by providing a pre-defined structure that guides further layer deposition and pattern formation.
Solution Approach 2:
The insulating spacer acts as an intermediary element between the rods and the second conductivity-type semiconductor layer. It facilitates the manufacturing process by providing a buffer layer that simplifies the formation of the upper layers while maintaining the stress-relief benefits of the rod structure.
3Reliability
If insulating spacers are conformally formed to surround active layers, then stress relief and electrical insulation are improved, but the device structure becomes more complex
Solution Approach 1:
The insulating spacer serves multiple functions simultaneously: it provides electrical insulation between the rods and the second conductivity-type semiconductor layer, relieves compressive stress through its conformal structure, and facilitates the manufacturing process by serving as a template for subsequent layer formation. This multi-functionality reduces the need for additional separate components.
Solution Approach 2:
The insulating spacer combines multiple functions into a single structural element, merging electrical insulation, stress relief, and manufacturing guidance into one conformally formed layer. This consolidation simplifies the overall device structure compared to having separate components for each function.
Data Source
AI summary
A semiconductor light-emitting device includes a first conductivity-type semiconductor layer having, in an upper portion thereof, a plurality of rods spaced apart from each other, a plurality of active layers respectively formed on upper surfaces of the plurality of rods, a plurality of second conductivity-type semiconductor layers respectively formed on upper surfaces of the plurality of active layers, an insulating spacer conformally formed between the plurality of rods, surrounding all sidewalls of each of the plurality of active layers, and covering portions of sidewalls of each of the plurality of second conductivity-type semiconductor layers, a first electrode layer in contact with a lower portion of the first conductivity-type semiconductor layer, and a second electrode layer filling an inner space of the insulating spacer and in contact with the plurality of second conductivity-type semiconductor layers.