Light-Emitting Element Conductive Patterning for Display Alignment

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Solution Overview

Problem

Current display devices face challenges in achieving high light emission efficiency due to misalignment and reverse orientation of light emitting elements, which reduces the bias degree and overall emission efficiency.

Innovation Solution

The display device incorporates a substrate with spaced electrodes, a light emitting element with semiconductor layers, and a conductive pattern that overlaps the active layer but not the semiconductor layers, along with insulating patterns and dopants, to improve alignment and bias, enhancing light emission efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a conventional light emitting element structure is used without specific conductive patterning, then the device structure is simpler, but the light emission efficiency is reduced due to misalignment and reverse orientation

Engineering Contradiction:
Improvestructure simplicityVSAvoidlight emission efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The light emitting element is segmented into distinct functional layers including first and second semiconductor layers, an active layer, and insulating layers with different dopant regions. This segmentation allows each layer to be optimized for its specific function, improving overall light emission efficiency while maintaining manufacturability through standardized layering processes

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the light emitting element are doped with different dopants (first dopant in first dopant region, second dopant in second dopant region) to create localized electrical properties. The conductive pattern is strategically positioned to overlap specific regions, creating local quality variations that enhance bias degree and light emission efficiency without complicating the overall structure

Inventive Principle:
Principle #3Local quality

2Productivity

If the conductive pattern is positioned to overlap the active layer only, then the light emission efficiency is improved through better alignment, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidpattern alignment precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The conductive pattern is formed and positioned in advance during the manufacturing process, before final assembly. The insulating layers with different dopants are prepared beforehand with predetermined patterns, ensuring that when the light emitting element is assembled, the conductive pattern is already correctly positioned to overlap the active layer, reducing alignment precision requirements during final assembly

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Insulating layers are introduced as intermediary elements between the conductive pattern and the semiconductor layers. These insulating layers act as spacers and alignment references, ensuring the conductive pattern overlaps the active layer at the correct position without requiring extremely high precision direct alignment, thus improving light emission efficiency while managing manufacturing precision requirements

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If dopant regions are differentiated in the active pattern, then the bias degree of light emitting elements is increased, but the device complexity increases

Engineering Contradiction:
Improvebias degreeVSAvoiddoping structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The electrical parameters of different regions are changed by introducing different dopants with different concentrations and types. The first dopant region and second dopant region have distinct electrical properties that create the necessary bias degree for efficient light emission. This parameter differentiation is achieved through controlled doping processes that modify the electrical characteristics of specific regions without fundamentally changing the overall device structure, thus increasing reliability while managing complexity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The improved alignment and doping process increase the bias degree of light emitting elements, resulting in enhanced light emission efficiency and reliability of the display device.

Implementation Method 1

forming a light emitting element by doping a dopant region of the active pattern, and forming the light emitting element includes: providing a conductive material layer exposing a first dopant region of the active pattern; forming a first semiconductor layer by doping a first dopant in the first dopant region; forming a conductive pattern exposing a second dopant region of the active pattern by patterning the conductive material layer; and forming a second semiconductor layer by doping a second dopant different from the first dopant in the second dopant region

Methodology Applied
Scientific EffectDoping: Dopants

Data Source

PatentUS12183769B2Display device and method of manufacturing the same
Publication Date: 2024.12.31 SAMSUNG DISPLAY CO LTD
  • US12183769B2 patent drawing
  • US12183769B2 patent drawing
  • US12183769B2 patent drawing

AI summary

A display device and a method of manufacturing the same are provided. A display device includes: a substrate including a plurality of pixels; a first electrode and a second electrode spaced apart from each other on the substrate; a light emitting element located between the first electrode and the second electrode; and a conductive pattern on the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the conductive pattern overlaps the active layer and does not overlap the first semiconductor layer or the second semiconductor layer.