Display Backplane Oxide TFT Layout for Low Leakage Current
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Solution Overview
Problem
Conventional amorphous-silicon thin-film transistors cannot meet the increasing demands of higher driving frequencies in larger display devices, while oxide-semiconductor materials like IGZO offer higher carrier mobilities, but high oxygen-vacancy concentrations in switching transistors lead to increased leakage current and power consumption.
Innovation Solution
A method for fabricating a displaying backplane involving the formation of oxide semiconductor active layers, ion implantation to reduce oxygen-vacancy concentrations in no-channel and channel regions, and subsequent grid formation to optimize carrier mobility and reduce leakage current, thereby minimizing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If oxide-semiconductor materials are used in switching transistors, then carrier mobility is improved, but oxygen-vacancy concentration increases leading to higher leakage current
Solution Approach 1:
The patent applies different treatments to different regions of the oxide semiconductor layer: the channel region maintains high oxygen content for high carrier mobility, while the source/drain regions undergo oxygen removal to reduce leakage current. This spatial differentiation of material properties resolves the contradiction between mobility and leakage.
Solution Approach 2:
The oxide semiconductor layer is segmented into functionally distinct regions: a channel region with high oxygen concentration for carrier transport, and source/drain regions with reduced oxygen concentration for low leakage. This segmentation allows each region to optimize its performance independently.
2Speed
If oxide-semiconductor materials are used in driver transistors, then carrier mobility is improved, but manufacturing complexity increases due to selective treatment requirements
Solution Approach 1:
The patent introduces an intermediary layer (such as a metal oxide layer or protective layer) that facilitates selective oxygen removal. This intermediary enables the complex selective treatment to be achieved through a more manageable process sequence, reducing overall manufacturing complexity.
Solution Approach 2:
The patent performs preliminary oxygen removal in source/drain regions before final device assembly. By preparing the material in advance with the correct oxygen distribution, subsequent manufacturing steps are simplified, offsetting the initial complexity.
3Object-generated harmful factors
If ion implantation is performed to reduce oxygen-vacancy concentration, then leakage current is reduced, but manufacturing time increases
Solution Approach 1:
The patent optimizes ion implantation parameters (energy, dose, temperature) to achieve effective oxygen removal in minimal time. By carefully controlling these parameters, the treatment time is reduced while maintaining effectiveness in lowering leakage current.
Solution Approach 2:
The patent employs periodic or pulsed ion implantation rather than continuous treatment. This intermittent approach maintains effectiveness while reducing total processing time, allowing the material to relax between treatment pulses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively maintains high carrier mobility in driver transistors while reducing oxygen-vacancy concentrations in switching transistors, leading to lower leakage current and reduced power consumption in display backplanes.
Implementation Method 1
performing ion implantation to the first no-channel regions, the second no-channel regions and the second channel region, to reduce oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region
Data Source
AI summary
The present disclosure provides a method for fabricating a displaying backplane, a displaying backplane and a displaying device, and relates to the technical field of displaying. The method includes forming a first active layer and a second active layer on a substrate base plate; forming a first grid insulating layer covering the first active layer and the second active layer; forming a first grid on the first grid insulating layer; performing ion implantation to the first no-channel regions, the second no-channel regions and the second channel region, to reduce oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region; and forming a second grid on the first grid insulating layer.