Display Apparatus Contact Hole Formation Using Etch Stop Layer
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Solution Overview
Problem
In display apparatus manufacturing, defects often occur during the formation of contact holes connecting elements on different layers, leading to inefficiencies and reduced performance.
Innovation Solution
A display apparatus structure and manufacturing method that includes a substrate with specific layers such as a semiconductor layer, gate insulating layers, conductive layers, an etch stop layer, and interlayer insulating layers, where the etch stop layer is made of amorphous carbon and the insulating layers are made of silicon oxide or silicon nitride, allowing for precise formation of contact holes using fluorine gas and oxygen plasma treatment to minimize defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional contact hole formation processes are used, then manufacturing is simpler, but defects occur in contact holes connecting elements on different layers
Solution Approach 1:
The contact hole formation process is divided into multiple sequential steps: forming a first contact hole through the first gate insulating layer, forming a second contact hole through the second gate insulating layer, and forming a third contact hole through the third gate insulating layer. This segmentation allows each contact hole to be precisely controlled and formed through its respective insulating layer, preventing defects that occur when attempting to form all contact holes simultaneously or using conventional single-step processes.
Solution Approach 2:
The first contact hole is formed in advance through the first gate insulating layer before forming the second and third contact holes. This preliminary action ensures that the first contact hole is properly established and can serve as a reference or foundation for subsequent contact hole formation, improving overall reliability by preventing defects that might arise from simultaneous or reversed process sequencing.
2Reliability
If multiple gate insulating layers are used, then element isolation and control are improved, but contact hole formation becomes more difficult
Solution Approach 1:
The multiple gate insulating layers (first, second, and third gate insulating layers) are processed sequentially with dedicated contact hole formation steps for each layer. This segmentation allows each insulating layer to be independently processed and opened, maintaining effective element isolation while making contact hole formation manageable through systematic, step-by-step execution rather than attempting to penetrate all layers simultaneously.
Solution Approach 2:
Contact holes are formed in a predetermined sequence corresponding to the layer structure. The first contact hole through the first gate insulating layer is formed preliminarily, followed by subsequent contact holes through higher layers. This preliminary action approach simplifies manufacturing by establishing a clear process sequence that prevents confusion and defects associated with trying to form all contact holes through multiple layers at once.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents or minimizes defects in the manufacturing process, ensuring accurate contact hole formation and enhancing the reliability and performance of the display apparatus.
Implementation Method 1
allowing for precise formation of contact holes using fluorine gas
Implementation Method 2
oxygen plasma treatment to minimize defects
Data Source
AI summary
A display apparatus includes a first semiconductor layer, a first gate insulating layer, a first conductive layer, an etch stop layer, a second gate insulating layer, a second conductive layer, a first interlayer insulating layer, a second semiconductor layer, a third gate insulating layer, a second interlayer insulating layer, and a first connection electrode layer that are sequentially stacked. The first connection electrode layer includes a first connection electrode contacting the first semiconductor layer via a contact hole defined in the first gate insulating layer, the etch stop layer, the second gate insulating layer, the first interlayer insulating layer, the third gate insulating layer, and the second interlayer insulating layer.