Display Electrode Recess Structure for Lower Contact Resistance
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Solution Overview
Problem
Existing display devices face challenges in reducing the contact resistance of the common electrode, which affects power consumption and overall performance.
Innovation Solution
A display device design that includes a pixel electrode, a light-emitting element with specific semiconductor layers, a via layer, and a common electrode that directly contacts the second semiconductor layer through a recess, thereby reducing contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the common electrode contacts the light-emitting element through an insulating via layer, then the structural integrity and insulation are maintained, but the contact resistance increases
Solution Approach 1:
The patent segments the contact interface by creating a recess in the third semiconductor layer that exposes the second semiconductor layer, allowing the common electrode to make direct contact at a specific location while maintaining insulation through the via layer in other areas. This segmented approach reduces contact resistance at the contact point while preserving overall structural integrity.
Solution Approach 2:
The via layer serves as an intermediary insulating structure that allows the common electrode to contact the second semiconductor layer through a controlled opening. The via layer maintains insulation where needed while permitting direct contact through the recess, effectively mediating between the conflicting requirements of insulation and low contact resistance.
2Reliability
If the common electrode directly contacts the second semiconductor layer through a recess, then contact resistance is reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The recess is formed in the third semiconductor layer before the common electrode is deposited, using the via layer pattern as a mask. This preliminary formation of the recess structure with defined dimensions (width between 40%-90% of light-emitting element width) establishes precise contact geometry before subsequent manufacturing steps, reducing the cumulative precision requirements.
Solution Approach 2:
The recess creates a localized region with different properties than the surrounding structure. By concentrating the direct contact function in this specific localized area with controlled dimensions, the patent achieves low contact resistance without requiring high precision across the entire device structure, only in the specific recess region.
3Reliability
If the via layer height is reduced to allow better contact, then contact resistance decreases, but the insulation performance may be compromised
Solution Approach 1:
The via layer is segmented into regions: areas where it provides insulation coverage and areas where it forms the sidewalls of the recess. This segmentation allows the via layer to simultaneously provide insulation where needed and facilitate direct contact through the recess, resolving the contradiction between insulation performance and contact resistance.
Solution Approach 2:
The solution moves from a two-dimensional planar contact interface to a three-dimensional recess structure. By creating vertical sidewalls and a bottom surface in the recess, the common electrode achieves direct contact with the second semiconductor layer while the via layer maintains insulation on the sidewalls, effectively using dimensional change to resolve the insulation-contact resistance conflict.
Data Source
AI summary
The present disclosure may provide a display device and a method for manufacturing the same. According to one or more embodiments, a display device includes a pixel electrode above a substrate, a light-emitting element above the pixel electrode, and including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer in sequence, the third semiconductor layer defining a recess exposing a portion of the second semiconductor layer, a via layer above the substrate, and surrounding at least a portion of the light-emitting element, and a common electrode above the light-emitting element and the via layer, and directly contacting the second semiconductor layer through the recess.