Display Insulating Groove Layout for Crack-Stopping Control Lines
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Solution Overview
Problem
Cracks readily propagate along inorganic insulating layers in display devices, leading to breaks in control lines, despite the formation of slits and holes in electrodes, which is inadequate in preventing crack propagation.
Innovation Solution
A display device configuration that includes a substrate, semiconductor layer, gate insulating film, wiring lines, and interlayer insulating films, with specifically designed first and second grooves in the gate insulating film to guide and stop crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If slits and holes are formed in electrodes to prevent crack propagation, then crack resistance is improved, but crack propagation along inorganic insulating layers still occurs
Solution Approach 1:
The patent divides the gate insulating film into multiple segments by forming grooves that extend from the semiconductor layer toward the control line. These grooves segment the potential crack path, forcing cracks to deflect into the grooves rather than propagating directly through the control line. The grooves act as isolated compartments that interrupt crack continuity.
Solution Approach 2:
The grooves serve as intermediary structures between the semiconductor layer and the control line. Instead of allowing direct crack propagation from the semiconductor layer step to the control line, the grooves intervene as a mediating feature that captures and redirects cracks, preventing them from reaching the control line.
2Reliability
If a gate insulating film is formed over a semiconductor layer, then electrical insulation is improved, but cracks occur along the gate insulating film due to steps
Solution Approach 1:
The patent applies local quality by creating grooves with specific geometric characteristics (depth, width, spacing) at critical locations where cracks are most likely to propagate. The grooves are positioned to coincide with the step regions of the semiconductor layer, providing localized crack management where it is most needed while leaving other regions intact.
Solution Approach 2:
The patent converts the harmful effect of stress concentration at semiconductor layer steps into a beneficial feature by positioning grooves at these exact locations. The grooves utilize the stress concentration points to initiate controlled crack paths that are directed into the grooves rather than toward the control line, transforming a weakness into a protective mechanism.
3Adaptability or versatility
If control lines are formed on the gate insulating film, then device functionality is improved, but cracks propagate through the gate insulating film causing control line breaks
Solution Approach 1:
The patent implements preliminary action by pre-forming the grooves in the gate insulating film before the control line is formed or before potential cracking occurs. This preparatory structuring creates a predetermined crack management system that is already in place to intercept and redirect cracks before they can reach and break the control line.
4Reliability
If wiring line layers are formed on the gate insulating film, then electrical connectivity is improved, but cracks occur and propagate causing wiring line breaks
Solution Approach 1:
The patent extracts the crack propagation path from the continuous gate insulating film by removing material to form grooves. This extraction creates discontinuities in the insulating film that serve as crack traps, separating the crack propagation process from the wiring line layer and preventing cracks from traveling through the wiring structure.
Data Source
AI summary
A display device according to an aspect of the disclosure includes a display region. The display region is provided with a plurality of first grooves and a plurality of second grooves formed between adjacent control lines and spaced apart from the plurality of control lines, in a plan view. Each of the plurality of first grooves extends in a second direction along a coupling semiconductor layer, between the adjacent control lines, in a plan view. Each of the plurality of second grooves extends in a direction intersecting a first groove of the plurality of first grooves, and is adjacent to at least one end portion of the first groove.