Display Substrate Insulating Layer Step for High-Transmittance Areas
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Solution Overview
Problem
Current display apparatus manufacturing techniques face challenges in achieving high transmittance while maintaining device quality and yield, particularly in ensuring light or sound transmission through the substrate without compromising refractive index or introducing impurities.
Innovation Solution
The display apparatus includes a semiconductor layer on a substrate with a gate insulating layer, a gate electrode overlapping the semiconductor layer, and an interlayer insulating layer with varying thickness portions, where the electrode layer is electrically connected through a contact hole, and the interlayer insulating layer is etched using CF4 with a bias voltage, allowing for secure transmittance by exposing the substrate surface in the transmission area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the interlayer insulating layer is removed in the transmission area to enhance transmittance, then light transmission is improved, but the device structure becomes more complex and manufacturing difficulty increases
Solution Approach 1:
The interlayer insulating layer is segmented into different thickness regions: a first thickness in the transmission area and a second thickness in the non-transmission area. This segmentation allows light to pass through the thinner region while maintaining insulation in the thicker region, resolving the contradiction between enhancing transmittance and maintaining structural simplicity.
Solution Approach 2:
The interlayer insulating layer exhibits local quality variation with different thicknesses in different areas. The first thickness region provides high transmittance for light transmission, while the second thickness region provides adequate insulation. This local differentiation resolves the contradiction by optimizing each region for its specific function.
2Illumination intensity
If additional etching processes are added to create thickness variation in the interlayer insulating layer, then transmittance is improved, but manufacturing productivity decreases
Solution Approach 1:
The formation of thickness variation in the interlayer insulating layer is merged with the existing contact hole etching process. By combining these operations, the patent achieves the desired thickness variation without adding separate etching steps, thereby maintaining manufacturing productivity while improving transmittance.
Solution Approach 2:
The thickness variation of the interlayer insulating layer is prepared in advance during the contact hole formation process. This preliminary action ensures that the transmission area has reduced thickness before subsequent electrode formation, achieving transmittance improvement without requiring additional post-processing steps.
3Illumination intensity
If the interlayer insulating layer is completely removed to maximize transmittance, then light transmission is optimized, but impurity protection and device stability are compromised
Solution Approach 1:
The interlayer insulating layer maintains different quality levels in different regions: the first thickness region is minimized to enhance transmittance, while the second thickness region is maintained to provide impurity protection and ensure device stability. This local quality differentiation resolves the contradiction between maximizing transmittance and maintaining reliability.
Solution Approach 2:
Instead of completely removing the interlayer insulating layer, the patent applies partial removal by reducing the thickness to a first value in the transmission area while maintaining a second thickness in other areas. This partial action achieves sufficient transmittance improvement while retaining adequate protection against impurities and maintaining device stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances transmittance by removing obstacles and preventing impurity penetration, thereby improving device stability and yield while maintaining refractive index consistency, ensuring effective light or sound transmission.
Implementation Method 1
the interlayer insulating layer is etched using CF4 with a bias voltage
Data Source
AI summary
A display apparatus includes: a semiconductor layer on a substrate; a gate insulating layer on the substrate and covering the semiconductor layer; a gate electrode on the gate insulating layer and at least partially overlapping the semiconductor layer; an interlayer insulating layer on the gate electrode; and an electrode layer on the interlayer insulating layer and electrically connected to the semiconductor layer, wherein the interlayer insulating layer comprises a first portion and a second portion extending from the first portion, and the electrode layer is on the first portion of the interlayer insulating layer, and a step is provided by a difference in thicknesses of the first portion and the second portion.