Display Panel Oxygen Gradient Layer for Oxide TFT Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Oxide thin film transistors (TFTs) face defects due to oxygen vacancies caused by wet etching, leading to reduced carrier transport rates and unstable threshold voltage under thermal or light stimulation, affecting the working stability of thin film transistors.
Innovation Solution
A display panel design with an oxygen supplement functional layer having higher oxygen content near the electrode layer than near the active layer, using a metal oxide material for the electrode layer, and a manufacturing method involving a high oxygen environment to form the metal oxide layer, which injects and releases oxygen ions to fill vacancies in the active layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wet etching is used to form the active layer and source-drain electrodes, then the manufacturing process is simple and compatible with existing equipment, but oxygen vacancies are generated in the active layer, reducing carrier transport rate and stabilizing threshold voltage
Solution Approach 1:
The invention divides the etching process into two separate stages: first etching the active layer to form the transistor structure, then etching the source-drain electrodes. This segmentation allows different etching conditions to be applied to different layers, reducing oxygen vacancy generation in the active layer while maintaining manufacturing simplicity.
Solution Approach 2:
The invention applies a preliminary protective treatment to the active layer before etching the source-drain electrodes. This preliminary action prevents etchant damage to the active layer, reducing oxygen vacancies and stabilizing threshold voltage while maintaining process efficiency.
2Ease of manufacture
If wet etching is used for source-drain electrode formation, then the process is straightforward, but the active layer is affected by etchant, increasing oxygen vacancies and reducing carrier transport rate
Solution Approach 1:
The invention segments the etching operations into distinct steps with different protective measures. The active layer is protected during source-drain electrode etching, preventing oxygen vacancy generation while maintaining electrode formation simplicity and carrier transport performance.
Solution Approach 2:
The invention introduces a protective intermediary layer or treatment between the etchant and the active layer. This intermediary prevents direct contact between the etchant and active layer, avoiding oxygen vacancy generation while allowing straightforward electrode formation.
3Device complexity
If the active layer is exposed to etchant during source-drain electrode formation, then the manufacturing process is simplified, but external thermal or light stimulation causes threshold voltage offset, affecting working stability
Solution Approach 1:
The invention applies preliminary protective measures to the active layer before source-drain electrode etching. This preliminary protection prevents etchant-induced damage that would later cause threshold voltage offset under thermal or light stimulation, improving working stability without significantly increasing process complexity.
Solution Approach 2:
The invention implements beforehand cushioning by applying a protective layer or treatment to the active layer prior to etching. This cushioning prevents etchant damage that would otherwise cause threshold voltage instability under external stimulation, maintaining process simplicity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the carrier transfer rate and stabilizes the threshold voltage, improving the working stability of the thin film transistor by filling oxygen vacancies and mitigating the effects of external thermal or light stimulation.
Implementation Method 1
an oxygen supplement functional layer, configured to release oxygen ions to fill the oxygen vacancies
Implementation Method 2
forming a metal oxide layer on the first passivation layer in an environment where gas pressure ratio of oxygen to inert gas is greater than 40%
Data Source
AI summary
The present application provides a display panel and a manufacturing method thereof, and a mobile terminal. The display panel includes a substrate, a film transistor layer, an oxygen supplement functional layer, and an electrode layer; the thin film transistor layer includes a gate electrode, a gate insulating layer, an active layer, and a source-drain electrode layer. Material of the active layer is metal oxide semiconductor; material of the electrode layer is metal oxide material. Wherein oxygen content on a side of the oxygen supplement functional layer close to the electrode layer is greater than oxygen content on a side of the oxygen supplement functional layer close to the active layer.