Display Panel TFT Layout for Lower Self-Heating Current Drive

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Solution Overview

Problem

Current display panels with light-emitting devices face high current requirements, leading to significant self-heating issues in thin film transistors due to large channel widths, which affects their reliability.

Innovation Solution

A display panel design featuring a substrate with an active layer comprising metal oxides, a gate electrode, source, and drain electrodes, where the active layer is subjected to conductorizing treatment to reduce channel width, and the electrodes are structured with sublayers and openings to enhance signal transmission and stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a thin film transistor with a large channel width is designed to meet high current requirements, then the current capability is improved, but the self-heating effect becomes more serious and reliability deteriorates

Engineering Contradiction:
Improvecurrent capabilityVSAvoidthin film transistor reliability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The gate electrode is divided into multiple sublayers (first sublayer, second sublayer, third sublayer) with different chemical potentials. This segmentation allows each sublayer to contribute differently to the electric field distribution, enabling better control over the channel current while reducing self-heating effects in the thin film transistor.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different sublayers of the gate electrode are assigned different chemical potentials, creating local variations in electrical properties. The first and third sublayers have higher chemical potentials than the second sublayer, creating a specific electric field distribution that optimizes current flow while mitigating self-heating in critical regions of the channel.

Inventive Principle:
Principle #3Local quality

2Reliability

If the channel width is increased to reduce resistance and improve signal transmission, then the electrical conductivity is improved, but the self-heating effect increases and reliability decreases

Engineering Contradiction:
Improvesignal transmission efficiencyVSAvoidself-heating effect
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The chemical potential parameter is varied across different gate electrode sublayers. By setting the first and third sublayers with higher chemical potentials than the second sublayer, the invention creates an optimized electric field distribution that improves signal transmission while controlling temperature rise in the channel region.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces the channel width of thin film transistors, improving their reliability and signal efficiency while mitigating self-heating effects, thereby enhancing the overall performance of the display panel.

Implementation Method 1

the first metal layer comprises a first sublayer, a second sublayer, and a third sublayer laminated in sequence, and chemical potentials of the first sublayer and the third sublayer are both greater than that of the second sublayer

Methodology Applied
Scientific EffectChemical potential gradient:

Data Source

PatentUS20240038770A1Display panel and method of manufacturing same
Publication Date: 2024.02.01 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
  • US20240038770A1 patent drawing
  • US20240038770A1 patent drawing
  • US20240038770A1 patent drawing

AI summary

The embodiments of the application disclose a display panel and a method of manufacturing same. In the display panel, an active layer includes a first part, a second part, a conductor part, and a channel part. The conductor part is disposed between the first part and the second part and is connected to the channel part. A first metal layer includes a gate electrode, which overlaps the channel part. A second metal layer includes a source electrode and a drain electrode, the source electrode is connected to the first part, and the drain electrode is connected to the second part.