Display Panel Pixel Circuit Layout Using Silicon-Oxide TFT Links

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current display technologies, particularly those using OLED and QLED, face challenges in optimizing the layout and connectivity of transistors and conducting layers on a substrate to enhance the efficiency and stability of pixel circuits, leading to suboptimal performance in energy consumption and luminescence.

Innovation Solution

The proposed display panel incorporates a specific arrangement of transistors and conducting layers on a substrate, including a silicon semiconductor layer, oxide semiconductor layer, and conducting layers with defined connections and overlapping regions, which optimize the electrical connections and signal pathways for improved pixel circuit performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a transparent electrode is removed from a display panel, then manufacturing cost and difficulty are reduced, but contact with liquid crystal material cannot be ensured

Engineering Contradiction:
Improvemanufacturing cost and difficultyVSAvoidcontact with liquid crystal material
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent divides the electrode structure into multiple segments: a first electrode pattern on the first substrate and a second electrode pattern on the second substrate. This segmentation eliminates the need for a transparent electrode while maintaining electrical contact through the liquid crystal material between the substrates.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The liquid crystal material serves as an intermediary that provides both electrical contact and mechanical spacing between the first and second substrates. The spacer protrusions ensure the liquid crystal material maintains proper thickness and contact with both electrode patterns.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If spacer protrusions are formed only at corners, then manufacturing is simpler, but uniform liquid crystal material thickness cannot be ensured

Engineering Contradiction:
Improvespacer formation complexityVSAvoidliquid crystal material thickness uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies spacer protrusions at specific locations (corners and/or edges) rather than uniformly across the entire substrate. This local application maintains manufacturing simplicity while ensuring liquid crystal material thickness uniformity at critical areas where spacing is most needed.

Inventive Principle:
Principle #3Local quality

Data Source

PatentEP4148720B1Display panel and display apparatus
Publication Date: 2024.12.25 BOE TECHNOLOGY GROUP CO LTD
  • EP4148720B1 patent drawingFigure 1
  • EP4148720B1 patent drawingFigure 2A
  • EP4148720B1 patent drawingFigure 2B

AI summary

The disclosure provides a display panel and a display device. The display panel includes: a base substrate; a silicon semiconductor layer, the silicon semiconductor layer including an active silicon layer of a driving transistor and an active silicon layer of an initialization transistor, each of the active silicon layers being provided with a first region, a second region and a first channel region between the first region and the second region; a first insulating layer, a first conducting layer, a second insulating layer and an oxide semiconductor layer, the oxide semiconductor layer including an active oxide layer of a oxide transistor, the oxide semiconductor layer being provided with a third region, a fourth region and a second channel region between the third region and the fourth region. In the same sub-pixel, the second region of the active silicon layer of the initialization transistor is electrically connected to the third region of the active oxide layer of the oxide transistor, and the fourth region of the active oxide layer of the oxide transistor is electrically connected to a gate electrode of the driving transistor.