Doped Graphene Cap Layer for Interconnect Resistance
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Solution Overview
Problem
As semiconductor devices shrink, the reduced line width of metal wires leads to increased resistivity and reliability issues due to heat generation and electromigration, necessitating a cap layer to lower resistance and enhance reliability.
Innovation Solution
An interconnect structure is developed with a cap layer comprising doped graphene, specifically graphene doped with group V elements like nitrogen, phosphorus, or antimony, which is deposited between the metal wire and a dielectric layer to reduce electrical resistance and improve adhesion, thereby enhancing the reliability of the metal wire.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the line width of metal wire is reduced for high integration, then device size is decreased, but resistivity increases exponentially and reliability decreases
Solution Approach 1:
The patent applies composite materials by combining metal wire with graphene cap layers to create a hybrid structure. The graphene layer is deposited on the metal wire surface to form a composite conductor that leverages the high electrical conductivity of graphene to compensate for the increased resistivity caused by reduced wire dimensions, thereby maintaining reliability in miniaturized devices
Solution Approach 2:
The patent changes the physical and chemical parameters of the wire surface by depositing graphene cap layers with specific thicknesses (e.g., 1-10 nm) and doping concentrations. This modifies the electrical properties of the wire, reducing surface scattering effects and contact resistance, which addresses the resistivity increase problem in scaled-down interconnects
2Volume of moving object
If the line width of metal wire is reduced for high integration, then device size is decreased, but heat generation increases and reliability decreases
Solution Approach 1:
The graphene cap layer forms a composite structure with the metal wire that improves thermal management. Graphene's superior thermal conductivity helps dissipate heat generated in the narrow wire, preventing hotspots and maintaining reliability in high-density integration scenarios where heat dissipation is critical
Solution Approach 2:
The graphene cap layer acts as an intermediary between the metal wire and the surrounding dielectric environment. It serves as a thermal pathway that facilitates heat transfer from the wire core to the surrounding structures, mitigating the heat generation problem in scaled-down interconnects
3Reliability
If a cap layer is added to lower resistance, then electrical resistance is reduced, but device complexity increases
Solution Approach 1:
The patent employs thin film technology by depositing graphene cap layers with controlled thicknesses (e.g., 1-10 nm) on the metal wire surface. This thin film approach reduces electrical resistance effectively while minimizing the added structural complexity and volume, as the cap layer is extremely thin yet provides significant electrical performance improvement
Solution Approach 2:
The patent replaces traditional multi-layer metal cap structures with a single-layer graphene cap. This substitution simplifies the manufacturing process and reduces structural complexity while achieving the same or better resistance reduction effect, as graphene's superior electrical properties allow for thinner and simpler designs compared to conventional metal cap layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of doped graphene as a cap layer effectively reduces the electrical resistance of the metal wire and improves adhesion with subsequent deposition layers, forming a uniform thin film and preventing damage from electromigration, thus addressing the reliability concerns associated with shrinking semiconductor devices.
Implementation Method 1
The use of doped graphene as a cap layer effectively reduces the electrical resistance of the metal wire
Implementation Method 2
improves adhesion with subsequent deposition layers, forming a uniform thin film
Implementation Method 3
graphene doped with a group V element... a doping material of the doped graphene may include at least one of nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb)
Data Source
AI summary
Provided are an interconnect structure and an electronic device including the same. The interconnect structure may include a first dielectric layer including a trench, a conductive wire filling an inside of trench, and a cap layer on a top surface of the conductive wire. The cap layer may include graphene doped with a group V element. A second dielectric layer may be on a top surface of the first cap layer.