Semiconductor/Solid-State Device Details TRIZ Cases

A wiring structure uses an intermediate layer to bond upper and lower conductive structures while accommodating thermal expansion differences.

A GaAs semiconductor device uses a narrow band-gap contact layer to form non-gold ohmic contacts compatible with silicon processing.

A dam structure controls molding material distribution around integrated circuit dies to ensure adequate coverage and prevent overflow.

A semiconductor device control element delays switching of a first semiconductor element based on a second input signal.

Heating a patterned polymer layer causes it to flow and fill gaps between microbumps, eliminating expensive chemical mechanical polishing.

Selective CVD cobalt growth eliminates high-resistance PVD liners in BEOL interconnects to reduce contact resistance.

Merging heat sink portions with the lead frame reduces vertical profile while maintaining high thermal performance through localized thickness variations.

Fan-out semiconductor package uses exposed metal bumps during grinding to prevent copper residue generation.

Thermal expansion of a shim pushes stacked chips against cavity walls, eliminating repetitive positioning steps and boosting manufacturing throughput.

Elevated solder buttresses on wafer level packages improve connection strength and enable visual inspection of solder joints.

Stepwise patterning of stacked conductive and insulating layers creates thicker exposed pad portions that resolve punch defects during contact plug formation.

Redistribution layer structure electrically connects stacked semiconductor chips via vertical vias, reducing resistance and inductance to minimize power loss.

Relocating laser marks to a sealer surface opposite the chip prevents penetration damage and corrosion of underlying wirings.

An in situ cleaning method uses argon helium hydrogen plasma to remove polymer deposits from chamber surfaces while preventing metal pad oxidation.

Omitting solder balls at the semiconductor chip fringe reduces thermal stress concentration during temperature cycling.

Varying the voltage slope on unselected word lines reduces peak current while maintaining device reliability and operating speed in scaled-down memory arrays.

A semiconductor package uses a heat radiator body with a housing recess to connect a heat sink via adhesive agent for thermal conduction.

A second substrate with cavities accommodates bottom-mounted components, enabling easy formation of external connection terminals.

A semiconductor pad group uses asymmetric connection parts extending in opposite directions to optimize substrate area usage.

Segmented substrates isolate power devices from control circuitry, resolving the contradiction between compact package size and high reliability.

Segmented inflow and outflow tanks enable uniform liquid distribution, resolving leakage risks from numerous external joints.

A resist layer with openings guides flux deposition and solder ball positioning via a ball feeder for precise bump formation.

Recessed portions in penetration electrodes accommodate protruding electrodes to prevent substrate cracking during assembly.

Segmentation and local quality principles resolve reliability contradictions in pre-molded cavities by eliminating inserts.

A carbon nanotube thermal interface material uses a low melting point metal to fill interspaces between aligned tubes.

Extending redistribution line structures onto chip side surfaces enables vertical electrical connections between stacked semiconductor components.

Shape actuation layers in the encapsulant contact trace elements when thermally loaded, disabling the module and protecting sensitive data.

A temporary spacer creates clearance for embedding material over semiconductor die edges, preventing foil pressure damage and maintaining mechanical stability.

A multilayer metal contact structure seals TSV edges using a nickel diffusion barrier and gold layer to prevent oxidation.

Light-absorbing release film creates an air gap to separate interposers, eliminating adhesive residue and reducing fabrication failures.

Pyrolyzed polymer brush patterns form a char spacer that lowers load capacitance, improving operating speed and refresh characteristics in miniaturized cells.

Vertical offset of duplex plated bump-on-lead pads over substrate traces reduces electrical short risk and enables finer pitch between adjacent bumps.

Inclined word lines distribute connections vertically to secure process margins and reduce manufacturing failures in 3D memory arrays.

Relocating ground pads to the COF second surface eliminates step area wiring, narrowing the lower frame while maintaining reliable static discharge.

A wafer-level method creates unique chip identifiers by selectively degrading metal interconnections through targeted mask structuring.

Segmented ground planes and conductive vias reduce parasitic losses and thermal resistance in power amplifier packages.

Pre-cutting wafer-level substrates releases accumulated thermal stress before die bonding, reducing warpage and improving Chip-on-Substrate yield.

A semiconductor array employs a bridging portion with leg and top sections to enable clean substrate separation while maintaining device integrity.

An embedded stack package bonds chips to adhesive members with integrated circuit patterns and vias.

High Young's modulus end wirings resist dicing stress, preventing short-circuits while maintaining pixel resolution.

Direct bonding of a die-stacked structure to a redistribution layer eliminates bumping structures, reducing overall volume and manufacturing costs.

Embedding conductive wires and magnetic layers within a dielectric trench reduces step height below 15 micrometers, mitigating delamination risks.

Distinct bottom, middle, and top work-function layers in trenches reduce threshold voltage sensitivity while maintaining high driving current.

A wafer level fan-out package structure uses a substrate recess to position passive elements after encapsulation.

A planar leadframe downset creates an interior volume to receive and slow mold material flow during overmolding.

Wafer bonding merges individual chip placement into single operations, eliminating pick-and-place cycles to boost packaging throughput.

An elastomeric connector bridges semiconductor wafers and circuit substrates to maintain signal paths.

Resin fills gaps in conduction path plates to eliminate insulation voids and prevent short circuits.

Floating wells isolate substrate taps in multi-fingered ESD transistors to force perpendicular current flow.

Merging the adhesion and protective film into one layer eliminates extra manufacturing steps while preventing side etching of the bump.

PIN diode thermal terminal establishes continuous thermal ground path to dissipate heat without adding capacitive loading to RF signal circuit.

A graphene wiring structure uses an interlayer substance to reduce sheet resistance and enhance the wiring aspect ratio.

A segmented grinding process thins semiconductor chips while preserving contact pad integrity through intermediate polishing steps.

Low-doping p-well regions and grounded shields eliminate bias contamination to enhance noise isolation efficiency.

Low thermal expansion carriers stabilize stacked dies during pressure annealing, preventing warpage from coefficient mismatches.

A semiconductor dummy plug with specific dimensions suppresses stress migration in via contacts.

A power module adjusts total thickness by compressing an intermediate compensation layer, resolving manufacturing variations without abrasive polishing.

Stacking chips between lead members reduces package height while maintaining mounting reliability through integrated connections.

Directed self-assembly phase regions form masks to etch cavities in metal layers, reducing parasitic capacitance and RC delay.

Direct lead frame attachment eliminates wire bonds and molded packages, resolving size and thermal dissipation bottlenecks in power electronic modules.

Electroplating wires on a semiconductor wafer using a kerf bus reduces process complexity and cost compared to conventional damascene fabrication.

Protruding metal heat transfer elements embedded in adhesive layers conduct thermal energy from integrated circuit chips to support substrates.

Copper-copper inter-chip bonding wires equalize resistance and minimize capacitance to correct charge distribution errors in indirect time-of-flight sensors.

Connect die routes signals between functional dies to reduce package size and improve reliability.

Graphene cap layers lower wire resistivity and improve adhesion to mitigate electromigration damage in shrinking devices.

Vertical thin-film transistors reduce semiconductor area for bit-line selectors while maintaining high current capabilities.

Openings in the insulating layer allow gas escape during heat pressing, preventing conductive paste ejection and short circuits.

A trench-based metal-insulator-metal capacitor structure increases capacitance per unit area through sidewall integration.

Automated welding fixture secures conductive wires to wiring pins using spot welding and latch slots, eliminating manual winding errors.

A copper microchannel cooler uses tapered fins and a separator sheet to improve fluid distribution.

Batch processing substrate-based light emitter components enables simultaneous encapsulation of multiple LED chips.

A semiconductor heat sink uses a universal module base and customizable fin base to standardize manufacturing.

Photolabile monolayer absorbs specific frequencies to sever adhesion, eliminating mechanical force that causes warpage and defects in advanced packaging.

An upper passivation layer insulates the seal ring's conductive layers from sawing debris, preventing electrical shorts while maintaining structural integrity.

An intermediate metal layer prevents brittle nickel-tin compound formation during reflow, enhancing mechanical strength and fatigue resistance.

CMP surface preparation and barrier layers enable direct metal-to-metal wafer bonding, reducing voids and improving electrical connection quality.

Non-penetrating second vias in the sealing portion dissipate heat while avoiding stress-induced cracks and layout restrictions.

An ultra-stressor layer applies tensile and compressive films to source regions, enhancing current flow in CMOS transistors.

A hydrosilyl-containing organopolysiloxane accelerates addition curing in silicone compositions.

Inner lead pattern groups adjust pitch values to match metal interconnection densities on a semiconductor chip.

Non-conductive tie bar structures replace metal remnants in hybrid lead frames, preserving minimum creepage distance for high voltage isolation.

Opposite conductivity regions create reverse-biased diodes to prevent electrical shorts during backside wire bonding.

Alternating nitride and oxide dielectric layers obstruct lateral etching within gate cut trenches, preventing electrical shorts during power rail formation.

Plug isolation patterns segment main plugs into sub-plugs, resolving the trade-off between high storage capacity and manufacturing complexity.

Segmenting the cooling interface into multiple contact elements reduces thermal resistance and enables sub-zero operation for high-power devices.

Varying cross-sectional areas in T-shaped semiconductor regions improve heat transfer efficiency, resolving manufacturing simplicity constraints.

Vertical wire routing through a central substrate opening reduces package height and prevents sagging while maintaining electrical connectivity.

A semiconductor package drain electrode features a groove connecting to the sealing resin lateral face.

Replacing SF6 with C4F8, O2, and Ar plasma prevents pad fluorination and reduces material loss during trench formation.

Thermal diffusion creates silicide on vertical sidewalls and upper surfaces, reducing serial resistance where horizontal active area is minimal.

A carrier insulator with hollow-out structures exposes conductive pads to define precise chip bonding regions.

A detection circuit applies a random signal to an integrated circuit conductive path and compares it with a delayed return signal.

A through-silicon via connects to a pad via a lateral metal line, decoupling vertical and horizontal placement.

A semiconductor package integrates a flip chip IC with vertically stacked conductive carriers and magnetic material to form an on-package inductor.

Periodic pulse reverse plating deposits copper on modified vias to achieve square profiles and uniform thickness for high-density interconnection.

Oil gel and solvent gel resins soften at specific temperatures to fill gaps while maintaining conductivity without silicone migration.

A void space isolates the via conductor from surrounding dielectrics, reducing parasitic capacitance and leakage current density.

Angled conductive pillars accommodate thermal expansion mismatches between integrated circuit chips and packaging materials.