Semiconductor/Solid-State Device Details TRIZ Cases

A wiring structure uses an intermediate layer to bond upper and lower conductive structures while accommodating thermal expansion differences.

A GaAs semiconductor device uses a narrow band-gap contact layer to form non-gold ohmic contacts compatible with silicon processing.

A dam structure controls molding material distribution around integrated circuit dies to ensure adequate coverage and prevent overflow.

A semiconductor device control element delays switching of a first semiconductor element based on a second input signal.

Heating a patterned polymer layer causes it to flow and fill gaps between microbumps, eliminating expensive chemical mechanical polishing.

Selective CVD cobalt growth eliminates high-resistance PVD liners in BEOL interconnects to reduce contact resistance.

Merging heat sink portions with the lead frame reduces vertical profile while maintaining high thermal performance through localized thickness variations.

Fan-out semiconductor package uses exposed metal bumps during grinding to prevent copper residue generation.

Thermal expansion of a shim pushes stacked chips against cavity walls, eliminating repetitive positioning steps and boosting manufacturing throughput.

Elevated solder buttresses on wafer level packages improve connection strength and enable visual inspection of solder joints.

Stepwise patterning of stacked conductive and insulating layers creates thicker exposed pad portions that resolve punch defects during contact plug formation.

Redistribution layer structure electrically connects stacked semiconductor chips via vertical vias, reducing resistance and inductance to minimize power loss.

Relocating laser marks to a sealer surface opposite the chip prevents penetration damage and corrosion of underlying wirings.

An in situ cleaning method uses argon helium hydrogen plasma to remove polymer deposits from chamber surfaces while preventing metal pad oxidation.

Omitting solder balls at the semiconductor chip fringe reduces thermal stress concentration during temperature cycling.

Varying the voltage slope on unselected word lines reduces peak current while maintaining device reliability and operating speed in scaled-down memory arrays.

A semiconductor package uses a heat radiator body with a housing recess to connect a heat sink via adhesive agent for thermal conduction.

A second substrate with cavities accommodates bottom-mounted components, enabling easy formation of external connection terminals.

A semiconductor pad group uses asymmetric connection parts extending in opposite directions to optimize substrate area usage.

Segmented substrates isolate power devices from control circuitry, resolving the contradiction between compact package size and high reliability.

Segmented inflow and outflow tanks enable uniform liquid distribution, resolving leakage risks from numerous external joints.

A resist layer with openings guides flux deposition and solder ball positioning via a ball feeder for precise bump formation.

Recessed portions in penetration electrodes accommodate protruding electrodes to prevent substrate cracking during assembly.

Segmentation and local quality principles resolve reliability contradictions in pre-molded cavities by eliminating inserts.

A carbon nanotube thermal interface material uses a low melting point metal to fill interspaces between aligned tubes.

Extending redistribution line structures onto chip side surfaces enables vertical electrical connections between stacked semiconductor components.

Shape actuation layers in the encapsulant contact trace elements when thermally loaded, disabling the module and protecting sensitive data.

A temporary spacer creates clearance for embedding material over semiconductor die edges, preventing foil pressure damage and maintaining mechanical stability.

A multilayer metal contact structure seals TSV edges using a nickel diffusion barrier and gold layer to prevent oxidation.

Light-absorbing release film creates an air gap to separate interposers, eliminating adhesive residue and reducing fabrication failures.

Pyrolyzed polymer brush patterns form a char spacer that lowers load capacitance, improving operating speed and refresh characteristics in miniaturized cells.

Vertical offset of duplex plated bump-on-lead pads over substrate traces reduces electrical short risk and enables finer pitch between adjacent bumps.

Inclined word lines distribute connections vertically to secure process margins and reduce manufacturing failures in 3D memory arrays.

Relocating ground pads to the COF second surface eliminates step area wiring, narrowing the lower frame while maintaining reliable static discharge.

A wafer-level method creates unique chip identifiers by selectively degrading metal interconnections through targeted mask structuring.

Segmented ground planes and conductive vias reduce parasitic losses and thermal resistance in power amplifier packages.

Pre-cutting wafer-level substrates releases accumulated thermal stress before die bonding, reducing warpage and improving Chip-on-Substrate yield.

A semiconductor array employs a bridging portion with leg and top sections to enable clean substrate separation while maintaining device integrity.

An embedded stack package bonds chips to adhesive members with integrated circuit patterns and vias.

High Young's modulus end wirings resist dicing stress, preventing short-circuits while maintaining pixel resolution.

Direct bonding of a die-stacked structure to a redistribution layer eliminates bumping structures, reducing overall volume and manufacturing costs.

Embedding conductive wires and magnetic layers within a dielectric trench reduces step height below 15 micrometers, mitigating delamination risks.

Distinct bottom, middle, and top work-function layers in trenches reduce threshold voltage sensitivity while maintaining high driving current.

A wafer level fan-out package structure uses a substrate recess to position passive elements after encapsulation.

A planar leadframe downset creates an interior volume to receive and slow mold material flow during overmolding.

Wafer bonding merges individual chip placement into single operations, eliminating pick-and-place cycles to boost packaging throughput.

An elastomeric connector bridges semiconductor wafers and circuit substrates to maintain signal paths.

Resin fills gaps in conduction path plates to eliminate insulation voids and prevent short circuits.

Floating wells isolate substrate taps in multi-fingered ESD transistors to force perpendicular current flow.