Encapsulated Semiconductor Device Insulation Gap Filling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional encapsulated semiconductor devices often fail to exhibit sufficient insulation performance due to voids between metal members, leading to potential short circuits caused by charge concentration across large potential differences.
Innovation Solution
The encapsulated semiconductor device incorporates a first and second conduction path formative plate with a heatsink held by an insulation sheet, and an encapsulation resin that fills through holes or lead gaps in the conduction path formative plates, ensuring integral connection and low electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure with ceramic thin plate and resin sheet is used, then stable bonding of internal lead can be provided, but insufficient insulation performance occurs due to void formation between metal members
Solution Approach 1:
The invention utilizes the concept of filling voids and gaps (porous spaces) between metal members with encapsulation resin material. The encapsulation resin is designed to penetrate and fill the gaps between conduction path formative plates, eliminating voids that would otherwise concentrate charges and cause short circuits, thereby improving insulation performance while maintaining stable bonding.
Solution Approach 2:
The encapsulation resin acts as an intermediary substance between metal members (conduction path formative plates). It fills the gaps and provides both mechanical bonding stability and electrical insulation. The resin material serves dual functions: maintaining structural integrity for stable lead bonding while preventing charge concentration through complete gap filling.
2Ease of manufacture
If gaps between metal members are left unfilled, then manufacturing simplicity is maintained, but charge concentration occurs leading to short circuits
Solution Approach 1:
The invention incorporates gap-filling capability into the encapsulation process itself. The encapsulation resin is applied in advance to fill gaps between conduction path formative plates before final assembly and bonding. This preliminary action ensures that no voids remain to concentrate charges, while the encapsulation process itself remains integrated and does not add significant manufacturing complexity.
3Object-affected harmful factors
If encapsulation resin material completely fills gaps between conduction path formative plates, then insulation performance is improved, but manufacturing complexity increases
Solution Approach 1:
The invention merges the gap-filling function with the encapsulation function. Instead of separate steps for gap filling and encapsulation, the encapsulation resin material performs both functions simultaneously. The resin is applied to encapsulate the conduction path formative plates and inherently fills all gaps between them, eliminating the need for additional manufacturing steps while achieving complete void elimination for superior insulation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves sufficient insulation performance by eliminating voids and reducing electrical resistance, preventing short circuits and ensuring reliable operation under high current conditions.
Implementation Method 1
A through hole or a lead gap is formed in a region of the first conduction path formative plate in contact with the insulation sheet, and the insulation sheet is press-fitted into the through hole or the lead gap
Implementation Method 2
a heatsink held by the first conduction path formative plate with an insulation sheet interposed between the heatsink and the first conduction path formative plate
Implementation Method 3
an encapsulation resin configured to encapsulate the first and second conduction path formative plates
Implementation Method 4
a heatsink held by the first conduction path formative plate with an insulation sheet interposed between the heatsink and the first conduction path formative plate
Data Source
AI summary
An encapsulated semiconductor device includes: a first conduction path formative plate (1); a second conduction path formative plate (5) joined to the first conduction path formative plate; a power element (12) bonded to the first conduction path formative plate; a heatsink (14) held by the first conduction path formative plate with an insulation sheet (13) interposed between the heatsink and the first conduction path formative plate; and an encapsulation resin (9) configured to encapsulate the first and second conduction path formative plates. A through hole (3) or a lead gap (1b) is formed in a region of the first conduction path formative plate in contact with the insulation sheet. The insulation sheet is press-fitted into the through hole or the lead gap.