Memory Device Plug Isolation for Integration Density
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Solution Overview
Problem
As the degree of integration of memory devices increases, there is a need for a memory device capable of storing large-capacity data while simplifying manufacturing processes to reduce manufacturing costs.
Innovation Solution
A memory device with a stack structure featuring gate lines spaced apart, main plugs isolated into sub-plugs by plug isolation patterns, and a select isolation pattern between these patterns to improve integration and manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the degree of integration of memory devices is increased to store large-capacity data, then storage capacity is improved, but manufacturing process complexity increases and manufacturing cost increases
Solution Approach 1:
The plug structure is segmented into first and second sub-plugs by introducing a plug isolation pattern between them. This segmentation allows for simplified manufacturing processes while maintaining high integration density, as the isolated sub-plugs can be formed and processed independently, reducing the overall manufacturing complexity despite increased storage capacity requirements
2Quantity of substance
If the degree of integration of memory devices is increased to store large-capacity data, then storage capacity is improved, but manufacturing cost increases
Solution Approach 1:
By dividing the plug into first and second sub-plugs through the plug isolation pattern, the manufacturing process becomes more manageable and cost-effective. The isolated sub-plugs allow for standardized processing steps and reduced material waste, thereby lowering manufacturing costs while achieving high storage capacity
Solution Approach 2:
The gate lines are arranged in a stacked configuration in the vertical dimension rather than extending horizontally. This vertical stacking enables high storage capacity within a smaller footprint while simplifying the manufacturing process and reducing costs by utilizing vertical space efficiently
3Quantity of substance
If plug isolation patterns are used to isolate main plugs into sub-plugs, then integration density is improved, but device structure complexity increases
Solution Approach 1:
The plug isolation pattern segments the main plug into first and second sub-plugs, achieving higher integration density by allowing independent processing and arrangement of sub-plugs. While this adds structural elements, the segmentation enables more efficient space utilization and simplified subsequent manufacturing steps, balancing the increased structural complexity with improved integration density
4Manufacturing precision
If select isolation pattern is added to isolate gate lines, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The select isolation pattern segments and isolates specific gate lines (such as drain select lines) from each other, enabling precise control and manufacturing of individual gate lines. This isolation improves manufacturing precision by allowing independent processing and alignment of gate lines, while the modular nature of the isolation pattern prevents excessive complexity from propagating through the entire device structure
Data Source
AI summary
There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a stack structure including gate lines stacked to be spaced apart from each other; main plugs arranged to be spaced apart from each other; plug isolation patterns isolating the main plugs into first and second sub-plugs; and a select isolation pattern isolating at least one gate line located between the plug isolation patterns adjacent to each other.