T-Shaped Thermoelectric Cooling Elements for Heat Transfer
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Solution Overview
Problem
Conventional thermoelectric cooling (TEC) devices for semiconductor packages face challenges in efficiently managing heat generation, as they often rely on bulk metal molding and ceramic thermal conductors, which may not effectively address the thermal management needs of integrated circuits, potentially leading to damage or impairment of semiconductor packages and other components.
Innovation Solution
The proposed solution involves a thermoelectric cooling system with a unique configuration of P-type and N-type semiconductor regions, where the semiconductor regions have distinct portions with varying dimensions and shapes, such as T-shaped cross-sections, and are thermally coupled with dielectric regions of lower thermal conductivity, enhancing heat transfer efficiency through thermally conductive channels and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional bulk metal molding and ceramic thermal conductors are used in TEC devices, then the device structure is simple and easy to manufacture, but the heat transfer efficiency is insufficient to effectively manage heat generation in integrated circuits
Solution Approach 1:
The patent employs composite material structures including semiconductor regions (P-type and N-type) integrated with thermally conductive layers and dielectric regions. This composite approach combines materials with different thermal and electrical properties to achieve both efficient heat transfer and electrical isolation, resolving the contradiction between manufacturing simplicity and heat transfer effectiveness.
Solution Approach 2:
The patent implements local quality variations through T-shaped semiconductor regions with different cross-sectional areas at different locations. The varying cross-sectional areas create optimized thermal conduction paths in critical regions while maintaining electrical properties where needed, thereby improving heat transfer efficiency without compromising manufacturability.
2Ease of manufacture
If the semiconductor regions have uniform cross-sectional areas, then the manufacturing process is simpler, but the temperature difference between junctions and coefficient of performance are reduced
Solution Approach 1:
The patent introduces asymmetry in the semiconductor region geometry by designing T-shaped cross-sections where the cross-sectional area varies along the length of the semiconductor regions. This asymmetric configuration optimizes the thermal gradient distribution and enhances the temperature difference between hot and cold junctions, directly addressing the contradiction between manufacturing simplicity and thermal performance.
Solution Approach 2:
The patent changes the geometric parameter (cross-sectional area) of the semiconductor regions along their length, creating a tapered or T-shaped profile. This parameter variation optimizes heat flow distribution and improves the coefficient of performance, resolving the contradiction between uniform geometry simplicity and enhanced thermal performance.
3Reliability
If dielectric regions with high thermal conductivity are used, then heat transfer is improved, but thermal retention properties and operational costs increase
Solution Approach 1:
The patent applies local quality differentiation by using dielectric regions with specific thermal conductivity properties in particular locations between thermal channels. These dielectric regions provide thermal isolation where needed to prevent unwanted heat transfer and improve thermal retention, while maintaining efficient heat transfer in the thermal channel paths themselves.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat transfer efficiency, allowing for more effective cooling of semiconductor packages, potentially increasing the temperature difference between junctions and enhancing the coefficient of performance of the TEC system, while reducing thermal retention properties and operational costs.
Implementation Method 1
a TEC may comprise one or more P and/or N type diodes which in response to a current flow heat one side of the TEC and cool the other side of the TEC
Implementation Method 2
a first thermally conductive region; a second thermally conductive region thermally coupled to the second and third electrodes
Data Source
AI summary
A semiconductor thermoelectric cooler includes P-type and N-type thermoelectric cooling elements. The P-type and N-type thermoelectric elements have a first portion having a first cross-sectional area and a second portion having a second cross-sectional area larger than the first cross-sectional area. The P-type and N-type thermoelectric cooling elements may, for example, be T-shaped or L-shaped. In another example, the thermoelectric cooling elements have a first surface having a first shape configured to couple to a first electrical conductor and a second surface opposite the first surface and having a second shape, different from the first shape, and configured to couple to a second electrical conductor. For example, the first surface may have a rectilinear shape of a first area and the second surface may have a rectilinear shape of a second area different from the first area. The semiconductor thermoelectric cooler may be manufactured using thin film technology.