Graphene Wiring Structure with Interlayer Substance for Reduced Sheet Resistance
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Solution Overview
Problem
The challenge in manufacturing fine-width graphene wiring structures is the difficulty in etching metal catalysts like Fe, Co, or Ni, which are prone to carbon dissolution at low temperatures, and the requirement for a metal barrier layer in damascene wiring, which becomes a limitation for finer widths.
Innovation Solution
A method involving the deposition of a catalyst metal between insulative films, growth of multilayered graphene using hydrocarbon-containing gas, and the insertion of an interlayer substance to reduce sheet resistance and enhance wiring aspect ratio, while eliminating the need for a metal barrier layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal catalysts like Fe, Co, or Ni are used for graphene growth, then carbon dissolution at low temperature occurs, but etching becomes difficult
Solution Approach 1:
A metal barrier layer (e.g., Ru, Rh, Ir, Os, Pd, Pt, Ag, Au, or their alloys) is introduced as an intermediary between the metal catalyst and the etching process. This barrier layer prevents direct interaction between the etching solution and the metal catalyst, enabling easy etching while maintaining the carbon dissolution control properties of the original metal catalyst during graphene growth
Solution Approach 2:
The catalyst structure is segmented into two functional layers: the metal catalyst layer (Fe, Co, or Ni) that controls carbon dissolution during graphene growth, and the metal barrier layer that enables subsequent etching. This segmentation allows each layer to perform its specific function without interfering with the other
2Manufacturing precision
If damascene wiring with metal barrier layer is used, then carbon precipitation selectivity is improved, but wiring width becomes limited for finer dimensions
Solution Approach 1:
The metal barrier layer is selectively removed from the final wiring structure by etching through the insulative films, extracting only the portions needed for carbon precipitation control during growth, while leaving the metal catalyst exposed for subsequent graphene formation. This eliminates the barrier layer's constraint on wiring width in the final structure
Solution Approach 2:
The metal barrier layer is formed preliminarily during the damascene wiring process to provide carbon precipitation selectivity during the CVD growth stage, but is then removed afterward, allowing the wiring width to be determined solely by the metal catalyst pattern without the barrier layer's thickness constraints
3Manufacturing precision
If metal barrier layer is required on both sides of trench, then carbon precipitation selectivity is achieved, but aspect ratio and sheet resistance become problematic for finer widths
Solution Approach 1:
The metal barrier layer serves as a temporary intermediary during the CVD growth process to ensure carbon precipitation selectivity, but is then removed to eliminate its negative impact on wiring aspect ratio and sheet resistance in the final fine-width structure
Solution Approach 2:
The presence or absence of the metal barrier layer is changed as a process parameter: it is present during CVD growth to provide carbon precipitation selectivity, and then removed to optimize the electrical and geometric parameters (sheet resistance and aspect ratio) of the final wiring structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of fine-width graphene wiring with reduced sheet resistance and increased aspect ratio, suitable for next-generation electronics, without the limitations of traditional metal barrier layers.
Implementation Method 1
a metal material such as Fe, Co or Ni having a capability to dissolve and precipitate carbon at a low temperature
Implementation Method 2
growing multilayered graphene from the metal part by supplying hydrocarbon-containing gas
Implementation Method 3
forming a metal part on the substrate between the insulative films by depositing a catalyst metal
Data Source
AI summary
A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.