Doped IZO Contact Assistant for TFT Array Panels
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High contact resistance at the pad portions of thin film transistor array panels can lead to distorted signals, increased manufacturing time, and decreased yield, particularly when using integrated circuit chips directly mounted on the panels.
Innovation Solution
Incorporating indium zinc oxide (IZO) doped with a metal oxide that does not include indium or zinc, having a smaller Gibbs free energy than zinc oxide, as a contact assistant to reduce contact resistance and improve adhesion between signal lines and external devices, thereby enhancing signal transmission and manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If IZO is used as contact assistant material, then adhesion is improved, but contact resistance increases
Solution Approach 1:
The patent uses a composite material structure where IZO is doped with metal oxides having smaller Gibbs free energy (such as Ga2O3, Cr2O3, MnO, Ta2O5, SiO2, TiO2, ZrO2, BaO, Li2O, La2O3, Nd2O3, BeO, ThO2, Y2O3, CaO, Sc2O3, MgO, Sm2O3, Al2O3, UO2, B2O3, Na2O, or Nb2O5). This composite approach combines the adhesion benefits of IZO with the low contact resistance properties of the doped metal oxides, resolving the contradiction between adhesion strength and contact resistance.
Solution Approach 2:
The patent changes the chemical composition parameters of IZO by doping it with specific metal oxides. The doping ratio and selection of metal oxides with smaller Gibbs free energy than ZnO are optimized to simultaneously achieve low contact resistance and high adhesion, transforming the material properties to resolve the technical contradiction.
2Device complexity
If proper doping is not applied, then manufacturing process is simplified, but contact resistance increases and yield decreases
Solution Approach 1:
The patent optimizes the compositional parameters of IZO by introducing specific metal oxide dopants during the sputtering process. This parameter change enables the material to inherently achieve low contact resistance and high yield without requiring additional complex manufacturing steps, thus resolving the contradiction between process simplicity and product quality.
3Productivity
If manufacturing time is reduced, then productivity increases, but signal transmission quality may deteriorate
Solution Approach 1:
The patent applies preliminary doping of metal oxides with smaller Gibbs free energy into the IZO material during the sputtering process. This preliminary action ensures that the contact assistant layer is pre-configured with optimal properties for low contact resistance and signal integrity, eliminating the need for additional post-processing steps and enabling fast manufacturing without compromising signal transmission quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of IZO doped with a thermodynamically stable metal oxide reduces contact resistance, prevents signal distortion, and increases productivity by minimizing defect particles and oxidation reactions, leading to improved yield and reduced manufacturing time.
Implementation Method 1
the contact assistant includes indium zinc oxide (IZO) doped with a metal oxide not including indium (In) or zinc (Zn)
Data Source
AI summary
Exemplary embodiments of the present invention relate to a panel and a display device including the same, the panel including a substrate, a signal line arranged on the substrate, the signal line configured to transmit a driving signal, an insulating layer arranged on the signal line, and a pixel electrode and a contact assistant arranged on the insulating layer. The contact assistant is electrically connected to a portion of the signal line, the contact assistant includes indium zinc oxide doped with a metal oxide not including indium or zinc, and the metal oxide has a smaller Gibbs free energy than zinc oxide.