Doped Ring Memory Structure for Plasma Discharge Protection
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Solution Overview
Problem
Plasma discharge during semiconductor manufacturing processes can damage the gate dielectric layer of memory devices, leading to a decrease in retention performance.
Innovation Solution
Incorporating a doped ring and diodes within the semiconductor structure to act as a discharge path for plasma, preventing damage to the gate dielectric layer and improving retention performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma is used in deposition and etching processes, then manufacturing capability is improved, but plasma discharge damages the gate dielectric layer and decreases memory retention performance
Solution Approach 1:
The patent introduces a plasma protection structure comprising a first protection region (doped region) and a second protection region (guard ring structure) as intermediary elements between the plasma source and the memory device. These protection structures act as mediators that intercept and dissipate plasma discharge energy through controlled doping regions and conductive paths, preventing direct damage to the gate dielectric layer while allowing plasma processes to continue in the manufacturing workflow
2Reliability
If plasma protection structures are added, then memory retention performance is improved, but device complexity increases
Solution Approach 1:
The patent merges the plasma protection function with existing device structures by integrating the guard ring structure and doped regions into the substrate architecture. The protection structures are combined with the substrate and existing circuit elements, sharing common materials and fabrication processes, thereby reducing overall device complexity while maintaining protection functionality
Solution Approach 2:
The protection structures serve multiple functions: they act as plasma discharge paths, provide electrical grounding, and maintain substrate potential stability. The doped regions and guard ring structures are designed to perform both protection functions and electrical functions within the device, reducing the need for separate dedicated protection components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped ring and diodes effectively protect the gate dielectric layer from plasma discharge, enhancing the retention performance of memory devices.
Implementation Method 1
Plasma is often used in deposition and etching processes in a semiconductor manufacturing process. However, during the process, plasma discharge may cause damage to a semiconductor device.
Data Source
AI summary
A semiconductor device includes a substrate, a doped ring, a plurality of contacts, and a plurality of conductive lines. The substrate includes a first region and a second region surrounding the first region. The doped ring is located in the substrate in the second region and surrounds the first region. The doped ring includes a first doped region and a plurality of second doped regions. The first doped region is located in the substrate in the second region and surrounds the first region. The first doped region has an opening. The second doped regions are separated from each other and located in the substrate of the opening. The contacts are electrically connected to the second doped regions. The conductive lines are connected to the contacts and a plurality of conductive layers in the first region.