Capacitor Plate Formed From Doped Semiconductor
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Solution Overview
Problem
The existing methods for manufacturing capacitors on semiconductor substrates are costly and time-consuming due to the need for multiple sequential steps and the expense of metal layers, as well as the requirement for producing highly doped layers for other components like FETs and HBTs.
Innovation Solution
A capacitor design that uses a single metal plate with a doped semiconductor plate and a dielectric in between, where the doped semiconductor plate is produced in the same step as other substrate components, reducing manufacturing costs and integrating a metallic contact around the semiconductor plate for efficient production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple metal plate layers are used to manufacture capacitors, then the capacitor structure is complete and functional, but manufacturing cost increases and production time increases
Solution Approach 1:
The invention extracts and eliminates the need for multiple metal plate layers by replacing them with a single metal plate combined with a doped semiconductor plate. This extraction of unnecessary components directly reduces manufacturing cost while maintaining capacitor functionality through the alternative semiconductor-based structure.
Solution Approach 2:
The invention changes the material parameters by introducing doped semiconductor plates with specific doping concentrations (e.g., 1×10^18 to 1×10^20 atoms/cm³) to replace traditional metal layers. This parameter change in material composition and doping level enables the capacitor to function with fewer metal layers, reducing both cost and complexity.
2Reliability
If multiple metal plate layers are used to manufacture capacitors, then the capacitor structure is complete and functional, but production time increases due to sequential steps
Solution Approach 1:
The invention merges the functions of multiple metal plate layers into a single metal plate combined with a doped semiconductor plate. This consolidation reduces the number of sequential manufacturing steps required, thereby increasing production speed and productivity while maintaining the necessary capacitor structure.
Solution Approach 2:
The doped semiconductor plate is prepared in advance with appropriate doping concentrations and structures before final capacitor assembly. This preliminary action of pre-doping the semiconductor material allows for faster integration and reduces on-site manufacturing time, improving overall production efficiency.
3Reliability
If highly doped layers are produced separately for FETs and HBTs, then those components function properly, but manufacturing cost increases
Solution Approach 1:
The doped semiconductor plate serves multiple functions: it acts as a capacitor plate and simultaneously provides the highly doped layer needed for FETs and HBTs. This multi-functionality eliminates the need for separate production steps for each component, reducing manufacturing cost while ensuring all components receive the necessary highly doped layers for proper functionality.
4Ease of manufacture
If a single metal plate is used instead of multiple metal layers, then manufacturing cost reduces, but capacitor performance must be maintained
Solution Approach 1:
The invention uses a composite structure consisting of a metal plate combined with a doped semiconductor plate. This composite material approach maintains capacitor performance by leveraging the advantageous properties of both materials: the metal provides conductivity while the doped semiconductor provides the necessary electrical characteristics, ensuring performance is maintained despite using fewer metal layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces manufacturing costs and time by eliminating the need for multiple metal layers and allows for the production of doped semiconductor capacitor plates in the same step as other components, enhancing the integration of capacitive and resistive elements in integrated circuits.
Implementation Method 1
The doped semiconductor plate can be provided by diffusion of the dopant into the semiconductor substrate
Implementation Method 2
Alternatively, the doped semiconductor plate can be provided by implantation of the dopant into the semiconductor substrate
Implementation Method 3
The dielectric layer can be deposited on the doped semiconductor plate by vapour deposition
Data Source
AI summary
A capacitor comprising:a metal platea doped semiconductor plate; anda dielectric sandwiched therebetween.