Doped Silicon Floating Electrode for Memory Charge Storage
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Solution Overview
Problem
Current memory devices with three-dimensional structures face challenges in improving electrical characteristics such as charge holding and writing speed, which are crucial for enhancing reliability and performance.
Innovation Solution
The semiconductor device incorporates a charge storage film with a charge trapping layer and a floating electrode layer made of doped silicon, strategically positioned between electrode layers, along with insulating films to optimize charge storage and transfer, thereby improving memory cell performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a three-dimensional stacked structure with memory holes is used, then memory density is improved, but electrical characteristics such as charge holding and writing speed deteriorate
Solution Approach 1:
The charge storage film is segmented into multiple functional layers: a charge trapping layer for storing charges and a floating electrode layer for controlling charge injection. This segmentation allows independent optimization of charge holding (trapping layer) and writing speed (floating electrode layer), resolving the contradiction between memory density and electrical characteristics in three-dimensional stacked structures
Solution Approach 2:
The charge storage film uses a composite structure combining different materials with complementary properties: the charge trapping layer (e.g., silicon nitride) provides excellent charge retention, while the floating electrode layer (e.g., doped silicon) enables controlled charge injection. This composite approach maintains high memory density while improving charge holding and writing speed
2Adaptability or versatility
If electrode layers are stacked to form gate electrodes for select transistors and memory cells, then device integration is improved, but manufacturing complexity increases
Solution Approach 1:
The stacked electrode layers serve multiple functions: they act as gate electrodes for both select transistors and memory cells, and the charge storage film serves dual purposes of charge trapping and controlled injection. This multi-functionality reduces the number of separate components needed, simplifying manufacturing despite high device integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the writing characteristics and charge holding capabilities of memory cells, leading to improved electrical performance and reliability in memory devices.
Implementation Method 1
The charge storage film includes a charge trapping layer and a floating electrode layer. The charge trapping layer is provided between the tunnel insulating film and the floating electrode layer.
Implementation Method 2
The floating electrode layer includes doped silicon
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor layer; an electrode layer; a first insulating film; a charge storage film; and a second insulating film. The first insulating film is provided between the electrode layer and the semiconductor layer. The charge storage film is provided between the first insulating film and the electrode layer. The charge storage film includes a charge trapping layer and a floating electrode layer. The floating electrode layer includes doped silicon. The second insulating film is provided between the floating electrode layer and the electrode layer.