Double-Height Cell Regions for Dense Standard and Custom Cell Layouts

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Solution Overview

Problem

The existing semiconductor design processes face challenges in efficiently integrating custom and standard cells within semiconductor devices, particularly in optimizing the layout to minimize space while maintaining functional integrity, due to differences in cell sizes and placement requirements.

Innovation Solution

The implementation of a double height cell structure with specific fin and gate patterns, along with the use of dummy fins and gates, allows for a more compact and efficient layout by optimizing the arrangement of active and dummy fin patterns, enabling better integration of standard cells within the semiconductor device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If standard cells are used with fixed height dimensions, then placement into layout diagram is facilitated, but custom cells require larger footprint and cannot be efficiently integrated

Engineering Contradiction:
Improveplacement facilitationVSAvoidcell footprint
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The layout is segmented into multiple cell regions with different height requirements. Standard cells are placed in first cell regions with fixed height, while custom cells are placed in second cell regions with greater height. This segmentation allows each cell type to be optimized independently, resolving the contradiction between placement facilitation and footprint optimization.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different cell regions are assigned different height qualities based on local requirements. First cell regions maintain uniform fixed height for standard cells, while second cell regions provide increased height for custom cells. This local differentiation allows the layout to accommodate both cell types efficiently without compromising placement ease or increasing overall footprint unnecessarily.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If custom cells are designed with specific arrangements, then higher-level logic functions are achieved, but footprint increases compared to standard cells

Engineering Contradiction:
Improvelogic function capabilityVSAvoidcell footprint
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The layout transitions from a single-dimensional uniform height constraint to a multi-dimensional structure with varying cell region heights. Custom cells utilize the additional vertical dimension in second cell regions, allowing them to achieve complex logic functions without excessively increasing horizontal footprint. This dimensional change resolves the contradiction between adaptability and footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Stability of the object's composition

If uniform cell height is maintained across all regions, then layout consistency is achieved, but packing density and integration efficiency decrease

Engineering Contradiction:
Improvelayout consistencyVSAvoidpacking density
Core Design Contradiction:
Stability of the object's compositionVSQuantity of substance

Solution Approach 1:

The layout is divided into multiple cell regions with different height characteristics. First cell regions maintain uniform fixed height for layout consistency, while second cell regions provide variable height for improved packing density. This segmentation allows the system to achieve both layout consistency and high packing density simultaneously by applying different height rules to appropriate regions.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11756999B2Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
Publication Date: 2023.09.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11756999B2 patent drawing
  • US11756999B2 patent drawing
  • US11756999B2 patent drawing

AI summary

In at least one cell region, a semiconductor device includes fin patterns and at least one overlying gate structure. The fin patterns (dummy and active) are substantially parallel to a first direction. Each gate structure is substantially parallel to a second direction (which is substantially perpendicular to the first direction). First and second active fin patterns have corresponding first and second conductivity types. Each cell region, relative to the second direction, includes: a first active region which includes a sequence of three or more consecutive first active fin patterns located in a central portion of the cell region; a second active region which includes one or more second active fin patterns located between the first active region and a first edge of the cell region; and a third active region which includes one or more second active fin patterns located between the first active region and a second edge of the cell region.