Double-Layer Insulating Structure for Display Touch Parts
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Solution Overview
Problem
Existing display devices face challenges in manufacturing due to the vulnerability of insulating layers to etching solutions, which affects the durability and reliability of touch parts, particularly when forming conductive layers like copper, leading to instability and potential damage during the etching process.
Innovation Solution
A display device design featuring a double-layer insulating structure where the lower inorganic layer has a higher hydrogen atomic percent and breakdown voltage, and the upper inorganic layer has a lower hydrogen atomic percent, reducing its etching rate and enhancing physical durability, while the second conductive layer is formed using a wet etching process with specific gas compositions to minimize damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single-layer insulating layer is used, then the device complexity is reduced, but the reliability and durability against etching damage deteriorate
Solution Approach 1:
The insulating layer is divided into two separate layers: a lower inorganic layer (first insulating layer) and an upper inorganic layer (second insulating layer). This segmentation allows each layer to perform different functions - the lower layer provides etching resistance while the upper layer provides electrical insulation, thereby improving overall reliability without excessive complexity
Solution Approach 2:
The patent uses composite material structure with two different inorganic materials having distinct properties. The lower layer uses material with high etching resistance (e.g., silicon nitride), while the upper layer uses material with appropriate electrical insulation properties. This composite approach optimizes both etching resistance and electrical performance
2Reliability
If the lower inorganic layer has high hydrogen atomic percent, then the breakdown voltage is improved, but the etching rate increases causing potential damage
Solution Approach 1:
Different regions of the insulating structure have different hydrogen atomic percents optimized for their specific functions. The lower inorganic layer has high hydrogen atomic percent (optimized for breakdown voltage), while the upper inorganic layer has low hydrogen atomic percent (optimized for etching resistance). This local quality differentiation resolves the contradiction between electrical performance and etching durability
Solution Approach 2:
The patent changes the hydrogen atomic percent parameter between the two layers. The lower layer maintains high hydrogen atomic percent for electrical breakdown resistance, while the upper layer uses low hydrogen atomic percent to minimize etching rate. This parameter optimization in different layers simultaneously achieves both high breakdown voltage and etching durability
3Manufacturing precision
If wet etching process is used for forming second conductive layer, then the manufacturing precision is improved, but the insulating layer vulnerability to etching solutions increases
Solution Approach 1:
The lower inorganic layer with high etching resistance is formed first, before the wet etching process for the second conductive layer. This preliminary protective layer is already in place to shield the underlying structures from etching solution damage, allowing precise wet etching to proceed without compromising the insulating layer
Solution Approach 2:
The lower inorganic layer acts as an intermediary protective barrier between the etching solution and the upper inorganic layer. It mediates the interaction by selectively resisting the etching solution, allowing the wet etching process to achieve high precision for the second conductive layer while protecting the upper insulating layer from damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the electrical and physical durability of the insulating layer, reducing the risk of damage during the etching process, thereby increasing the reliability and yield of the display device, even when manufactured at low temperatures.
Implementation Method 1
a lower inorganic layer on the first conductive layer, an upper inorganic layer covering the lower inorganic layer and a second conductive layer on the upper inorganic layer
Implementation Method 2
The upper inorganic layer has a hydrogen atomic percent less than a hydrogen atomic percent of the lower inorganic layer
Data Source
AI summary
A display device includes a display part that displays an image, a touch part on the display part, the touch part including a first conductive layer on the display part, a lower inorganic layer on the first conductive layer, an upper inorganic layer covering the lower inorganic layer and a second conductive layer on the upper inorganic layer. The upper inorganic layer includes substantially a same material as the lower inorganic layer. The upper inorganic layer has a hydrogen atomic percent less than a hydrogen atomic percent of the lower inorganic layer.