Double Patterning Layout Design Anchoring Critical Paths

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Solution Overview

Problem

In semiconductor manufacturing, double patterning methods face challenges with capacitance mismatch due to the use of different colors for critical paths, leading to significant AC mismatch and performance variations.

Innovation Solution

Applying the same color to polygons corresponding to critical paths in the double patterning layout design, which reduces mismatch by ensuring consistent RC variations and anchoring critical paths to pre-apply colors, thereby minimizing the impact of process variations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If different colors are applied to adjacent patterns on the double patterning layout, then the patterning resolution is improved, but a considerably large AC mismatch is generated

Engineering Contradiction:
Improvepatterning resolutionVSAvoidAC mismatch
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies different colors to different regions of the layout based on their functional importance. Critical paths are assigned a first color while non-critical paths are assigned a second color, allowing the system to optimize for both resolution and AC mismatch reduction in different local regions of the circuit.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the color parameter assignment strategy by using color ratios as a design variable. By adjusting the proportion of first-color to second-color polygons in different regions, the system can control AC mismatch while maintaining the resolution benefits of double patterning.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If different colors are applied to critical paths on the double patterning layout, then the patterning resolution is improved, but performance variations increase

Engineering Contradiction:
Improvepatterning resolutionVSAvoidperformance variations
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent identifies critical paths as specific regions requiring different treatment. By assigning a uniform first color to all critical paths while using a second color for non-critical paths, the system maintains consistent electrical characteristics for performance-critical regions while still achieving high resolution through double patterning.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs preliminary identification and coloring of critical paths before final layout optimization. By pre-assigning colors to critical paths based on their functional importance, the system prevents performance variations from arising during subsequent manufacturing steps.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the same color is applied to polygons corresponding to critical paths, then AC mismatch is reduced, but the double patterning layout complexity increases

Engineering Contradiction:
ImproveAC mismatchVSAvoidlayout complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent reduces layout complexity by applying the same first color to all critical paths, creating a uniform regional characteristic. This simplifies the coloring algorithm while still achieving AC mismatch reduction through the strategic differentiation between critical and non-critical regions.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The first color serves multiple functions: it identifies critical paths for both AC mismatch control and for guiding the double patterning decomposition process. This multi-functionality reduces the need for separate optimization steps and simplifies the overall layout generation complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9098670B2Double patterning layout design method
Publication Date: 2015.08.04 SAMSUNG ELECTRONICS CO LTD
  • US9098670B2 patent drawing
  • US9098670B2 patent drawing
  • US9098670B2 patent drawing

AI summary

A double patterning layout design method includes defining critical paths including a first path and a second path on a schematic circuit, and defining a double patterning layout divided into a first mask layout having a first color and a second mask layout having a second color, the double patterning layout corresponding to the schematic circuit. The defining of the double patterning layout includes anchoring the critical paths on the schematic circuit.