A resist polymer forms a lactone ring under acid action to reduce solubility in organic solvent developers.
A chemically amplified negative resist composition uses a specialized onium salt quencher to manage photoacid behavior during lithography exposure.
Photo-thermal curing copolymer prevents flexible substrate deformation while ensuring complete crosslinking below 200°C.
A photoresist composition utilizes photoradical-assisted self-polymerization to stabilize the film structure during semiconductor manufacturing.
Segmented recording layers with infrared absorbing agents and polyurethane resins resolve the trade-off between development latitude and chemical resistance.
Reactive ion etching forms ink supply port portions using a mask with varying opening widths.
Tri-layer bonding material shrinks photoresist features by 5-15 nm through controlled acid generation.