Quencher Design for Chemically Amplified Negative Resist
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current chemically amplified negative resist compositions for lithography face challenges in achieving high resolution, low line edge roughness (LER), and improved dose margin, particularly when using carboxylic acid onium salts, which have limitations in acid diffusion control and industrial scalability.
Innovation Solution
A chemically amplified negative resist composition incorporating an onium salt with a nitrogen-containing aliphatic heterocycle and fluorocarboxylic acid structure is developed, which acts as a quencher to control acid diffusion and enhance pattern formation, specifically designed for EUV and EB lithography processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If carboxylic acid onium salts are used as quenchers in chemically amplified negative resist compositions, then acid diffusion control is achieved, but manufacturing precision (resolution and LER) is insufficient
Solution Approach 1:
The patent modifies the chemical structure of the onium salt by introducing a nitrogen-containing aliphatic heterocycle and fluorocarboxylic acid group, changing parameters such as basicity and acid diffusion control capability to achieve both high resolution and reliable acid diffusion control
Solution Approach 2:
The invention uses a composite structure combining nitrogen-containing aliphatic heterocycle with fluorocarboxylic acid group in the onium salt, creating a synergistic effect where the heterocycle provides basicity for acid diffusion control and the fluorocarboxylic acid group enhances resolution and pattern fidelity
2Manufacturing precision
If conventional quenchers are used in resist compositions, then ease of manufacture is maintained, but manufacturing precision (LER and pattern profile) deteriorates
Solution Approach 1:
The patent optimizes the chemical parameters of the onium salt by selecting specific nitrogen-containing aliphatic heterocycles and fluorocarboxylic acid structures with appropriate basicity and solubility characteristics, achieving low LER while maintaining ease of manufacture through established synthetic routes
3Manufacturing precision
If existing resist compositions are used for advanced lithography, then dose margin is insufficient, but manufacturing precision (pattern fidelity) cannot be improved
Solution Approach 1:
The invention adjusts the photoacid generator and quencher parameters by using fluorinated compounds and nitrogen-containing heterocycles, which modify the acid generation and diffusion characteristics to simultaneously improve pattern fidelity and dose margin
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high-resolution patterns with improved LER, fidelity, and dose margin, effectively addressing the limitations of existing compositions by controlling acid diffusion and ensuring better pattern formation in advanced lithography processes.
Implementation Method 1
the quencher is, in fact, essential for controlling acid diffusion and improving resist performance, especially resolution
Implementation Method 2
an acid generator which is decomposed to generate an acid upon exposure to light
Implementation Method 3
a crosslinker which causes the polymer to crosslink in the presence of the acid serving as a catalyst, thus rendering the polymer insoluble in the developer
Data Source
AI summary
A chemically amplified negative resist composition comprising (A) a quencher in the form of an onium salt containing an anion having a nitrogen-containing aliphatic heterocycle and a fluorocarboxylic acid structure and (B) a base polymer is provided. The resist composition forms a pattern of rectangular profile with improved LER, resolution, fidelity, and dose margin.