Resist Composition Polymer Lactone Ring Formation
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Solution Overview
Problem
Current negative tone resist compositions using organic solvent development exhibit low dissolution contrast between unexposed and exposed regions, limiting the ability to form fine hole patterns.
Innovation Solution
A resist composition featuring a polymer that forms a lactone ring under acid action, reducing its solubility in organic solvents, is used in a pattern forming process involving high-energy radiation exposure and organic solvent development to achieve high dissolution contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional positive resist composition is used for organic solvent development, then negative pattern can be formed, but dissolution contrast between unexposed and exposed regions is low
Solution Approach 1:
The patent changes the chemical structure of the polymer by introducing recurring units capable of forming lactone rings upon acid generation. This structural parameter change enables the polymer to exhibit dramatically different solubility in organic solvents between exposed and unexposed regions, achieving high dissolution contrast (difference of 10 times or more) while maintaining negative pattern formation capability
Solution Approach 2:
The resist composition uses a composite polymer structure containing specific recurring units (formula 1) that can form lactone rings, combined with other functional units (formulas 2 and 3) providing acid lability and solubility control. This composite material approach enables simultaneous achievement of high dissolution contrast and effective negative pattern formation through organic solvent development
2Manufacturing precision
If polymer forms lactone ring under acid action, then dissolution contrast is improved, but solubility in organic solvent is reduced
Solution Approach 1:
The polymer is pre-designed with recurring units containing specific chemical structures (formula 1) that have the latent capability to form lactone rings. Before exposure, these units remain in a soluble state. Upon acid generation during exposure, the lactone ring formation occurs automatically, transforming the polymer from soluble to insoluble state in organic solvents, thus achieving high dissolution contrast
Solution Approach 2:
The patent creates local quality differences within the polymer structure by introducing specific recurring units (formula 1) at controlled ratios (5-50 mol%). These units selectively form lactone rings in exposed regions, creating local insolubility, while unexposed regions maintain solubility. This local quality differentiation enables high dissolution contrast while preserving overall processability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process enables the formation of fine hole or trench patterns with high size control and sensitivity by promoting dissolution of the unexposed region and retarding dissolution of the exposed region, thereby enhancing pattern resolution.
Implementation Method 1
a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent
Implementation Method 2
exposing the resist film to high-energy radiation, baking, and developing the exposed film in an organic solvent-based developer
Data Source
AI summary
A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.