Double Patterning Pad Formation Using Segmented Mask Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current self-aligned patterning methods for forming patterns on substrates face challenges in efficiently creating non-linear and linear patterns for electronic devices, particularly in forming pads that are electrically coupled to memory cell transistors and capacitors, with existing methods being complex and less efficient in achieving precise geometric arrangements.
Innovation Solution
A method involving the formation of first and second masks with specific non-linear and linear patterns on a pad layer, where the pads are formed using a double patterning technology (DPT) process, allowing for the creation of pads with unique geometric configurations that are electrically coupled to memory cell transistors and capacitors, enabling precise arrangement and efficient patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-aligned patterning methods are used to form patterns on substrates, then manufacturing precision is improved, but device complexity increases due to the multi-step process involving sacrificial layers and multiple hard mask patterns
Solution Approach 1:
The patterning process is divided into two separate stages: first forming linear patterns using first masks, then forming non-linear patterns using second masks. This segmentation allows each mask type to specialize in one pattern geometry, reducing the overall process complexity while maintaining high precision through self-alignment between the two stages
Solution Approach 2:
The method transitions from attempting to form both linear and non-linear patterns in a single two-dimensional patterning step to using sequential patterning where the first masks establish a linear pattern framework, and the second masks add non-linear features in a subsequent step, effectively adding a temporal dimension to the patterning process
2Device complexity
If traditional single patterning methods are used, then device complexity is reduced, but manufacturing precision deteriorates when forming both linear and non-linear patterns
Solution Approach 1:
The complex task of forming both linear and non-linear patterns is segmented into two specialized patterning operations: first masks handle linear pattern formation with high precision, while second masks handle non-linear pattern formation. This segmentation allows each step to be optimized for its specific geometric requirements, achieving high overall precision without requiring a single overly complex patterning method
3Manufacturing precision
If multiple masks are used for patterning, then manufacturing precision is improved, but productivity decreases due to additional process steps
Solution Approach 1:
The method merges the functions of forming both linear and non-linear patterns into a unified double patterning framework where first and second masks work together in sequence. This merging allows the two patterning operations to be coordinated and optimized as an integrated process, improving throughput compared to using completely separate patterning methods for linear and non-linear features
Data Source
AI summary
An electronic device may include a substrate, and a plurality of spaced apart pads on the substrate. Each of the pads may includes first, second, third, and fourth sides, the first and third sides may be opposite sides that are substantially straight, and the second and fourth sides may be opposite sides that are curved. Related methods, devices, and structures are also discussed.