Double-Side Word Line DRAM Cell Layout Without Capacitor Contacts
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Solution Overview
Problem
DRAM manufacturers face challenges in shrinking memory cell area as word line spacing continues to shrink, necessitating a redesign to maintain performance and reduce cell size.
Innovation Solution
A semiconductor device with a common channel and two word lines disposed on opposite sides, eliminating the need for capacitor contacts, allowing for a 30% reduction in cell area compared to traditional designs while maintaining performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If traditional 6F2 DRAM cell design is used, then capacitor contact is required for data storage, but cell area cannot be reduced further due to spacing requirements
Solution Approach 1:
The invention extracts and eliminates the capacitor contact structure from the traditional 6F2 DRAM cell design. By removing the capacitor contact requirement, the design achieves a 30% reduction in cell area while maintaining functionality through an alternative memory structure that uses dual word lines and channel layer without traditional capacitor contacts
Solution Approach 2:
The invention transitions from a planar 2D layout to a 3D vertical structure by stacking word lines and channel layers in multiple layers. This dimensional change allows overlapping of cell components in the vertical direction, enabling area reduction while maintaining electrical connectivity and device functionality
2Area of stationary object
If word line spacing is reduced to shrink cell size, then memory density increases, but manufacturing precision requirements increase
Solution Approach 1:
The invention segments the word line structure into multiple discrete layers (first word line layer and second word line layer) with distinct formation processes. This segmentation allows each layer to be independently patterned and controlled, reducing the cumulative precision requirements compared to forming all word lines in a single step
Solution Approach 2:
The first word line layer is formed in advance before the second word line layer. This preliminary action allows optimization of each layer's formation process independently, and enables the use of different patterning techniques for different layers, thereby managing precision requirements more effectively
Data Source
AI summary
A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a first word line, a second word line, and a channel layer. The bit line is disposed on the substrate and extends along a first direction. The first word line is disposed on the substrate and extends along a second direction substantially perpendicular to the first direction. The second word line is disposed on the substrate and extending along the second direction. The channel layer is disposed between the first word line and the second word line and extending along the second direction.