Double-Sided Asymmetric Decoders for Memory Access Line Uniformity

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Solution Overview

Problem

In memory devices, particularly threshold-type memories, there is an issue with inconsistent selection signal delivery due to varying parasitic loads along access lines, leading to current and voltage spikes in memory cells closer to decoders and low current delivery to cells farther away, affecting uniformity and efficiency of memory operations.

Innovation Solution

The implementation of double-sided bipolar decoders, which are coupled to both ends of access lines, reduces the distance of furthest memory cells to their decoders, mitigates current and voltage spikes, and improves current delivery by allowing simultaneous driving from both ends, thereby enhancing signal uniformity and reducing circuit complexity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If decoders are coupled to one side of wordlines or bitlines in a standard quilt architecture, then decoder circuit complexity is reduced, but selection signal delivery uniformity deteriorates due to varying parasitic loads causing current and voltage spikes in near cells and low current delivery to far cells

Engineering Contradiction:
Improvedecoder circuit complexityVSAvoidselection signal delivery uniformity
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent divides the decoder functionality into two separate decoders positioned at opposite ends of the access lines. This segmentation allows each decoder to serve a specific region, reducing the maximum distance any memory cell must be driven and balancing the parasitic load distribution. The first decoder couples to a first end of access lines while the second decoder couples to a second end, creating two independent driving sources that work in concert to achieve uniform signal delivery across the entire memory array.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If memory cells are disposed farther from decoders, then memory array area is increased, but current delivery amplitude deteriorates due to high resistance path to decoders

Engineering Contradiction:
Improvememory array areaVSAvoidcurrent delivery amplitude
Core Design Contradiction:
Area of stationary objectVSPower

Solution Approach 1:

The patent transitions from a one-sided decoder architecture to a two-sided architecture, effectively adding a spatial dimension to the signal distribution. By placing decoders at both ends of the access lines, the maximum distance any memory cell must be driven is halved, and the resistance path is distributed across two parallel paths instead of one long path. This dimensional change enables larger memory arrays to be built without sacrificing current delivery amplitude to distant cells.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Power

If memory cells are disposed closer to decoders, then selection signal delivery is improved, but current and voltage spikes occur due to low resistance path to decoders

Engineering Contradiction:
Improveselection signal deliveryVSAvoidcurrent and voltage spikes
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The patent segments the memory array into two regions, each served by a dedicated decoder positioned at opposite ends. This segmentation ensures that no memory cell is too close to a single decoder, which would cause excessive current draw and voltage spikes. Instead, each cell receives balanced drive strength from its nearest decoder without the harmful effects of being overly close to a high-current source.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11688460B2Memory operation with double-sided asymmetric decoders
Publication Date: 2023.06.27 MICRON TECHNOLOGY INC
  • US11688460B2 patent drawing
  • US11688460B2 patent drawing
  • US11688460B2 patent drawing

AI summary

As described, an apparatus may include a memory cell corresponding to a memory address and an access line forming at least a portion of the memory cell. The apparatus may include a first decoder associated with a first delivery driver coupled to a first end of the access line and a second decoder associated with a second delivery driver coupled to another end of the access line.