Double Trench Rectifier 3D Junction Area
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Solution Overview
Problem
Traditional rectifiers with two-dimensional junctions face inefficiencies in maximizing junction surface area while minimizing space, leading to suboptimal current handling and increased costs due to lower semiconductor usage efficiency.
Innovation Solution
The creation of three-dimensional junctions using trenches in semiconductor substrates, which increases junction surface area without occupying additional horizontal space, allowing for higher current handling and lower forward voltage operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional two-dimensional junction diodes are used, then the device occupies less horizontal space, but the junction surface area is limited and current handling capability is reduced
Solution Approach 1:
The patent transitions from a two-dimensional planar junction to a three-dimensional trench-based junction structure. By etching trenches into the semiconductor substrate and forming junctions along the trench walls, the design adds a vertical dimension to the junction area, thereby increasing the total junction surface area without proportionally increasing the horizontal footprint on the die surface.
2Quantity of substance
If larger junction surface area is achieved through traditional scaling, then more current can be handled, but the semiconductor die usage efficiency decreases and costs increase
Solution Approach 1:
By forming trenches that extend vertically into the substrate, the junction area is multiplied along the trench walls rather than requiring proportional expansion of the horizontal die area. This allows multiple diodes to be packed more densely on the same die surface, improving die usage efficiency while maintaining or increasing current handling capability per unit area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables rectifiers to handle higher current densities at lower voltages, resulting in increased semiconductor usage efficiency up to 30% and extended battery life in mobile devices through reduced power consumption.
Implementation Method 1
The diode or rectifier (10) comprises a semiconductor substrate (12) with a first surface (14) and a second surface (16) substantially parallel to the first surface with a thickness between the surfaces. The anode includes at least one trench (18A) formed in the first surface with an inner surface at least partially doped P-type. The cathode includes at least one trench (18B) formed in the second surface with an inner surface at least partially doped N-type.
Data Source
AI summary
A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased current loads without increased horizontal die space. The increased current handling capability allows for the rectifier to operate at lower forward voltages. Furthermore, the present structure provides for increased substrate usage by up to 30 percent.