Semiconductor Devices TRIZ Cases

A CMOS single photon avalanche diode uses a deep well implant to extend the depletion region and form an integrated guard ring.

A trench-gate semiconductor device uses segmented regions to distribute electrical bias across a low-doped layer.

Anchoring layer uses a sacrificial breaking layer to separate components without lateral anchor structures, minimizing material loss.

A trench-type Ga2O3 MESFET with buried gate electrodes enables high-frequency operation.

Stacked dice arrays preserve uniform pixel pitch across enlarged imaging areas while maintaining high manufacturing yield for scalable focal plane systems.

A semiconductor package substrate includes a flow-suppressing portion separating the mounting region and reflective wall.

Segmented ion implantation guard rings buffer electric fields stepwise, preventing surface charge accumulation and early breakdown in trench Schottky diodes.

Segmented surface and reflection electrodes distribute current across a thin semiconductor film to enhance electrostatic damage resistance.

A non-planar SiGe PFET channel layer uses an intermediary capping layer to separate the high-germanium source from the metal gate.

A semiconductor device uses a pillar shaped insulator structure within the drift region to control carrier flow and reduce saturation voltage.

Concentric patterned epitaxial substrate disperses thermal stresses to prevent edge warpage during heating.

Insulation walls guide N-type electrode layers through a compound semiconductor structure to establish direct electrical connections.

A switching device employs a trench conductor layer to supply charges rapidly, enabling fast depletion layer contraction and reducing on-resistance.

A buried drain region extends vertically into the substrate to increase effective channel length.

An elastomeric interface layer enables precise adhesive attachment of micro-LED dies to pick-and-place heads.

A double trench rectifier forms three-dimensional junctions in opposing substrate surfaces to increase current handling capacity.

Segmented contact layers prevent electrical shorts between adjacent gates while increasing current carrying capacity.

Segmented impurity regions and trench gates lower threshold voltage and on-resistance in silicon carbide insulated gate bipolar transistors.

Optimizing the guard ring radius of curvature relative to drift layer thickness improves breakdown voltage while maintaining on-state current.

Segmenting layers into a superlattice with oxygen monolayers enhances mobility while acting as a dopant diffusion barrier.

A protection resistance layer connects power and sensor transistors to enhance capacitance characteristics.

Silver oxide reflecting film nanoparticles enhance adhesion to underlying layers, reducing light loss and improving reliability during heat treatment.

Insulation layer disperses current from P-electrode pads, reducing crowding and enhancing light emission area.

A light-emitting element design featuring a supportive substrate with a non-parallel bottom surface and a reflective layer.

Replacing silver with a dielectric DBR eliminates current leakage and aggregation while boosting reflectance and extraction efficiency.

P-type electric field relaxation regions distribute stress at trench corners, protecting the gate insulating layer while reducing on-resistance.

Roughened semiconductor surface scatters light to reduce total internal reflection and boost luminous efficiency.

A semiconductor device with a Schottky electrode, a leakage suppression structure, and a highly doped layer that generates a depletion layer to suppress reverse leakage current.

A temperature-sensitive scattering layer provides a white appearance at room temperature while maintaining high light transmission efficiency.

Laser ablation creates precise holes in the insulating member of a light-emitting module, enabling compact design and stable electrical connections.

A semiconductor device uses stacked high and low permittivity insulating layers to mitigate interface charge accumulation.

A growth layer with protruding domains creates internal regions that lower the refractive index to enhance light extraction.

An IGBT field stop region features a steeper impurity gradient near the collector to suppress voltage rise waveform ringing and electromagnetic interference.

Varying embedded column width stabilizes charge balance, reducing trench wall collapse risk and withstand voltage fluctuations.

A power semiconductor device uses an asymmetric backside emitter region to control charge carrier density across the drift layer.

Replacing opaque metal contacts with a single transparent Al-doped ZnO layer eliminates shadowing losses while maintaining low dark current.

A compensation layer with opposite doping reduces gate oxide field strength in SiC trench transistors.

Segmented transparent conductive layer blocks connected by a bridge eliminate center current crowding and ensure uniform light emission.

An index-matched pillar reduces total internal reflection at the substrate interface, increasing light extraction efficiency by up to 6%.

A bonding layer protects the current spreading layer while a conductive via enables light extraction without damage.

Segmented heterojunctions control sheet carrier density below 8E+10 cm−2, blocking hot electrons and mitigating current collapse in high-power applications.

Grooves on semiconductor fins increase surface area to boost saturation current and current density.

A buried layer distributes carrier concentration vertically within the semiconductor substrate to reduce surface field strength.

A 3D tunneling field-effect transistor uses air bridges to isolate source, drain, and gate components from the substrate.

Segmented small-sized LED chiplets improve heat management and efficiency by distributing thermal load across multiple independent units.

A self-assembled monolayer directs encapsulating material deposition to prevent short-circuits from overlay shift errors in vertical field effect transistors.

Segmented drift region layers distribute electric field to reduce peak strengths and improve short-circuit robustness without lowering blocking voltage.