Semiconductor Termination Insulating Layers for Crack and Charge Control
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Solution Overview
Problem
Semiconductor devices with semi-insulating films on electrodes in termination regions face issues of crack generation, moisture corrosion, and reduced breakdown voltage due to interface charge variations and electric field concentration, leading to instability and decreased moisture resistance.
Innovation Solution
The semiconductor device incorporates a high permittivity layer and a low permittivity layer, with specific distance and angle configurations, to mitigate charge accumulation and prevent crack formation, thereby enhancing breakdown voltage stability and moisture resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semi-insulating film is formed on an electrode in a termination region, then breakdown voltage suppression is improved, but crack generation occurs at the electrode end leading to reduced moisture resistance
Solution Approach 1:
The patent divides the insulating film structure into multiple segments: a first insulating film layer and a second insulating film layer with different material compositions and properties. This segmentation allows each layer to perform specific functions - the first layer provides breakdown voltage suppression while the second layer prevents crack propagation and moisture infiltration, thereby resolving the contradiction between breakdown voltage suppression and moisture resistance.
Solution Approach 2:
The patent employs composite material structure by combining different insulating film materials with distinct properties. The first insulating film uses one material system optimized for electrical breakdown characteristics, while the second insulating film uses another material system optimized for mechanical integrity and moisture barrier properties. This composite approach enables simultaneous achievement of both breakdown voltage suppression and crack prevention.
2Reliability
If a semi-insulating film is formed on an electrode, then breakdown voltage control is improved, but interface charge variations cause electric field concentration and reduce device stability
Solution Approach 1:
The insulating film is segmented into multiple layers with different material properties. The first layer controls breakdown voltage while the second layer stabilizes interface charges by providing a more stable dielectric interface with the semiconductor substrate. This segmentation isolates the interface charge instability to a specific layer while preserving breakdown voltage control functionality.
Solution Approach 2:
The composite insulating film structure combines materials with different dielectric properties and interface characteristics. The first material provides appropriate breakdown characteristics while the second material provides superior interface stability and charge retention properties, thereby resolving the contradiction between breakdown control and interface charge stability.
3Area of stationary object
If the second insulating film extends close to the second impurity layer, then device area is reduced, but crack propagation risk increases when distance is less than 10 μm
Solution Approach 1:
The patent applies local quality by making the second insulating film's extension distance position-dependent. In critical regions where the distance to the second impurity layer is less than 10 μm, the design maintains adequate spacing to prevent crack propagation. In non-critical regions, the film can extend closer to maximize area utilization. This localized approach allows area optimization without compromising overall device strength.
Solution Approach 2:
The second insulating film acts as a preventive cushioning layer that is strategically positioned and sized to intercept and stop crack propagation before it reaches critical impurity layers. By ensuring adequate distance (≥10 μm) in vulnerable areas, the film provides a safety margin that prevents catastrophic failure while allowing compact design in safer regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively suppresses reduction in breakdown voltage and improves moisture resistance by preventing corrosion and interface charge variations, resulting in improved semiconductor device performance under high temperature and humidity conditions.
Implementation Method 1
a high permittivity layer disposed at least on the second impurity layers; and a low permittivity layer disposed on the high permittivity layer
Data Source
AI summary
A semiconductor device according to the present disclosure includes a P layer, an insulating film, an electrode, a plurality of P- layers arranged on a side of a termination region of the P layer, an N- layer, an N++ layer, an insulating film, an electrode, a high permittivity layer disposed at least on the P- layers, and a low permittivity layer disposed on the high permittivity layer, and a distance between an end on a side of an active region of the insulating film and an end on a side of the termination region of one of the P- layers located farthest from the active region is more than µm and µm or less, and a distance between the end on the side of the active region of the insulating film and an end on a side of the active region of the electrode is 50 µm or more.