Semiconductor Light-Emitting Element Electrode Segmentation
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Solution Overview
Problem
Semiconductor light-emitting elements with laminated structures have low electrostatic damage resistance due to current crowding and reduced light extraction efficiency, especially when subjected to surge voltages, as the thin semiconductor film limits current spreading and light output.
Innovation Solution
A semiconductor light-emitting element design featuring a support substrate, a semiconductor film with a light-emitting layer, and a light-reflecting layer, where the surface electrode includes ohmic and Schottky contact electrodes arranged to prevent current channeling under power supply pads, and a reflection electrode with a dielectric layer to promote current spreading and inhibit forward current, enhancing electrostatic damage resistance without reducing light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the semiconductor film thickness is reduced to improve light extraction efficiency, then light extraction efficiency is improved, but electrostatic damage resistance deteriorates
Solution Approach 1:
The electrode is divided into multiple electrode pieces arranged in a specific pattern. This segmentation allows current to spread through multiple paths across the semiconductor film, increasing the effective current spreading area without increasing the overall electrode footprint, thereby maintaining light extraction efficiency while improving electrostatic damage resistance.
Solution Approach 2:
The electrode pieces are positioned to create non-uniform current distribution patterns. By strategically placing electrode pieces at specific locations, the current density is optimized locally to enhance current spreading in regions that contribute to electrostatic damage resistance while minimizing impact on light extraction regions.
2Loss of energy
If the semiconductor film thickness is reduced to improve light extraction efficiency, then light extraction efficiency is improved, but current spreading capability deteriorates
Solution Approach 1:
The electrode is segmented into multiple electrode pieces that are distributed across the semiconductor film surface. This segmentation creates multiple current injection points that facilitate lateral current spreading through the thin semiconductor film, compensating for the reduced thickness without compromising light extraction efficiency.
Solution Approach 2:
The electrode design transitions from a conventional single-layer configuration to a multi-level structure with electrode pieces at different positions. This dimensional arrangement enables current to spread laterally through the thin film by utilizing vertical positioning of electrode pieces, effectively enhancing current spreading capability in the lateral dimension.
3Productivity
If electrode coverage area is increased to improve current spreading, then current spreading is improved, but light extraction efficiency deteriorates
Solution Approach 1:
The electrode is divided into multiple discrete electrode pieces rather than a continuous large-area electrode. This segmentation allows current to spread through multiple distributed points across the semiconductor film, achieving effective current spreading while leaving sufficient uncovered areas for efficient light extraction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents current crowding and enhances electrostatic damage resistance while maintaining light extraction efficiency by forming a current path between electrodes during reverse surge voltages, improving the overall performance of the semiconductor light-emitting element.
Implementation Method 1
a light-reflecting film is formed on a surface of a semiconductor film opposite the light-extraction surface... light heading towards a side opposite the light-extraction surface is reflected by the light-reflecting film and released to the exterior
Implementation Method 2
a second electrode piece electrically connected to the first electrode piece, the second electrode piece adapted for forming a Schottky contact with the semiconductor film and forming a barrier inhibiting a forward current in the semiconductor film
Implementation Method 3
a first electrode piece forming an ohmic contact with the semiconductor film
Implementation Method 4
Light incident on an interface between the semiconductor film and air, a resin, or another surrounding medium at an angle equal to or greater than the critical angle is totally reflected... Light that cannot be extracted to the exterior is repeatedly reflected within the semiconductor film
Implementation Method 5
light heading towards the light-extraction surface is scattered and diffracted by the uneven section of the semiconductor film surface
Data Source
AI summary
A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.