Schottky Barrier Diode Leakage Suppression and Forward Voltage Reduction
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Solution Overview
Problem
Schottky barrier diodes face a trade-off between reducing forward voltage and reverse leakage current, as structures that minimize one typically increase the other, leading to higher on-resistance and forward voltage.
Innovation Solution
A semiconductor device with a Schottky electrode, a leakage suppression structure, and a highly doped layer that generates a depletion layer to suppress reverse leakage current and reduce forward voltage by narrowing the current path, using a P-type diffusion region or trench gate structure embedded with a gate electrode, and a highly doped layer with higher impurity concentration than the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a P-type diffusion region or trench gate structure is used to suppress reverse leakage current, then reverse leakage current is reduced, but on-resistance and forward voltage increase
Solution Approach 1:
The patent applies local quality by creating a highly doped layer (first conductive type) in a specific region between the surface and the leakage suppression structure. This localized high-doping region reduces on-resistance and forward voltage in the forward current path without affecting the reverse leakage suppression function of the leakage suppression structure. The different doping concentrations in different regions allow simultaneous optimization of both forward and reverse characteristics.
2Object-generated harmful factors
If the leakage suppression structure is positioned deeper to better block reverse current, then reverse leakage suppression improves, but forward current path resistance increases
Solution Approach 1:
The patent resolves the spatial conflict by introducing a vertical dimension solution - placing the highly doped layer in the depth direction between the surface and the leakage suppression structure. This vertical positioning allows the highly doped layer to reduce forward resistance in the shallow region while the leakage suppression structure operates effectively at greater depths, thus resolving the contradiction between reverse suppression and forward conduction through dimensional separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Simultaneously reduces reverse leakage current and forward voltage by effectively blocking the reverse current path and lowering on-resistance, addressing the contradictory requirements of Schottky barrier devices.
Implementation Method 1
a leakage suppression structure, formed in a surface region of the semiconductor substrate, for suppressing a leakage current by generating a depletion layer when a reverse bias voltage is applied between the Schottky electrode and the semiconductor substrate
Implementation Method 2
a highly doped layer formed in the surface region of the semiconductor substrate in a region between the surface and the leakage suppression structure, the highly doped layer being the first conductive type, exhibiting a higher impurity concentration than the semiconductor substrate
Implementation Method 3
a Schottky electrode forming a Schottky interface between a surface of the semiconductor substrate and itself
Data Source
AI summary
The semiconductor device includes a first conductive type semiconductor substrate; a Schottky electrode forming a Schottky interface between a surface of the semiconductor substrate and itself; a leakage suppression structure, formed in a surface region of the semiconductor substrate, for suppressing a leakage current by generating a depletion layer when a reverse bias voltage is applied between the Schottky electrode and the semiconductor substrate; and a highly doped layer formed in the surface region of the semiconductor substrate in a region between the surface and the leakage suppression structure, the highly doped layer being the first conductive type, exhibiting a higher impurity concentration than the semiconductor substrate, and forming the Schottky interface between the Schottky electrode and itself.