DRAM Capacitor Structure With Blocking Layer for Leakage Isolation
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in optimizing the structure of capacitors in dynamic random-access memory (DRAM) to prevent leakage current and ensure effective node separation, which affects the integration and reliability of the devices.
Innovation Solution
The semiconductor device incorporates a dielectric layer between lower electrodes and an upper electrode, with a support layer and blocking layers having higher bandgap energy materials to prevent leakage current and enhance electrical characteristics, using an Area Selective Atomic Layer Deposition process for manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If capacitor size is miniaturized to achieve high integration and miniaturization, then device density increases, but electrical integrity deteriorates and leakage currents increase
Solution Approach 1:
A blocking layer with higher bandgap energy material is introduced as an intermediary between the support layer and dielectric layer. This blocking layer acts as a mediator to prevent direct contact and potential leakage paths, thereby maintaining electrical integrity while allowing capacitor miniaturization for higher integration density.
Solution Approach 2:
The blocking layer is selectively positioned only at critical interfaces where leakage prevention is most needed (between support layer and dielectric layer, and between etch stop layer and dielectric layer). This localized application of high bandgap energy material provides targeted electrical isolation without compromising overall device performance or requiring complete structural redesign.
2Productivity
If capacitor size is reduced, then integration density improves, but leakage currents increase due to increased risk of electrical bridges
Solution Approach 1:
The blocking layer serves as an intermediary barrier that prevents conductive material residue formation and electrical bridge formation between adjacent structures. By positioning this high bandgap energy material at critical interfaces, leakage currents are blocked while allowing the capacitor structures to be miniaturized for higher integration density.
Solution Approach 2:
The blocking layer is formed in advance before the dielectric layer deposition, creating a preliminary protective barrier that prevents harmful conductive residue formation and electrical bridge formation before they can occur during subsequent processing steps or device operation.
3Reliability
If blocking layers with higher bandgap energy are introduced, then leakage currents are reduced and electrical reliability improves, but device complexity increases
Solution Approach 1:
The blocking layer is applied selectively only at specific critical interfaces (support layer-dielectric layer interface and etch stop layer-dielectric layer interface) rather than throughout the entire capacitor structure. This localized approach improves electrical reliability at critical points while minimizing the increase in overall device complexity and processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces leakage current and improves the electrical characteristics and reliability of the semiconductor device, enabling better integration and performance in miniaturized DRAM capacitors.
Implementation Method 1
a blocking layer disposed between the at least one support layer and the dielectric layer, and including a material having a bandgap energy greater than a bandgap energy of a material of the at least one support layer
Data Source
AI summary
A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, at least one support layer in contact with the plurality of lower electrodes and extending in a direction, parallel to an upper surface of the substrate, an upper electrode disposed on the plurality of lower electrodes and the at least one support layer, a dielectric layer between the plurality of lower electrodes and the upper electrode and between the at least one support layer and the upper electrode, and a blocking layer disposed between the at least one support layer and the dielectric layer, and including a material having a bandgap energy greater than a bandgap energy of a material of the at least one support layer. The dielectric layer is in contact with the plurality of lower electrodes and is spaced apart from the at least one support layer by the blocking layer.