DRAM Capacitor Electrode Recess Structure for Stable Manufacturing
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Solution Overview
Problem
The manufacturing process of double-sided capacitors in DRAM semiconductor structures is unstable due to the use of holes in the dielectric layer as a matrix to deposit the lower electrode, leading to structural instability.
Innovation Solution
A method involving the formation of recessed structures in the conductive layer, with a first recessed structure extending downward to the substrate and a second recessed structure above the contact pads, followed by the sequential deposition of dielectric and conductive layers, to stabilize the semiconductor structure during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If holes are etched in the dielectric layer structure and used as a matrix to deposit the thin film to produce the lower electrode, then the capacitance structure can be formed, but the capacitance structure becomes unstable during the manufacturing process
Solution Approach 1:
Instead of using holes (cavities) in the dielectric layer as the matrix to deposit the lower electrode, the patent inverts the approach by forming the lower electrode on a solid surface and then creating holes through it. Specifically, the lower electrode is first formed on the substrate, then holes are etched through the lower electrode and dielectric layer, and finally the upper electrode is deposited. This inversion eliminates the instability caused by using holes as a deposition matrix while maintaining the double-sided capacitor structure.
2Device complexity
If holes are used as a matrix for thin film deposition to produce the lower electrode, then the double-sided capacitance structure can be created, but the structural integrity is compromised
Solution Approach 1:
The patent applies preliminary action by first forming the lower electrode on the substrate in a stable, solid-state configuration before creating any holes. The sequence is: (1) form lower electrode on substrate, (2) form dielectric layer, (3) etch holes through both layers, (4) deposit upper electrode. This preliminary formation of the lower electrode ensures structural integrity is established before any potentially destabilizing hole formation occurs, while still achieving the complex double-sided capacitance structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the stability of the semiconductor structure by forming a stable lower electrode through etching the conductive layer, improving the structural integrity compared to traditional methods that use holes as a matrix for thin film deposition.
Implementation Method 1
etching the upper surface of the first conductive layer to form a first recessed structure and a second recessed structure
Implementation Method 2
the thin film is deposited sequentially at the two sides of the lower electrode to produce a dielectric medium
Data Source
AI summary
Embodiments relate to a method for manufacturing a semiconductor structure, and the semiconductor structure. The method includes: providing a substrate in which a plurality of contact pads arranged in an array are provided, wherein the contact pad protrudes from the upper surface of the substrate; forming a first barrier layer on the substrate and the surface of the contact pad; forming a first conductive layer on the surface of the first barrier layer; etching the upper surface of the first conductive layer to form a first recessed structure and a second recessed structure, wherein the first recessed structure extends downward to the substrate, the projection of the first recessed structure on the substrate surrounds the contact pad, and the second recessed structure is formed in the first conductive layer and arranged above each of the corresponding contact pads.