DRAM Contact Hole Bump Structure to Prevent Wire Voids
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The fabrication process of dynamic random access memory (DRAM) often results in voids or gaps in the wires filled in contact holes, which reduces the yield and performance of semiconductor memory due to inadequate contact area between the wire and the second contact region.
Innovation Solution
A method involving the formation of bumps on second contact regions, where the wire is electrically connected to the bump within filling holes in an isolation layer, increasing the contact area and reducing the likelihood of voids or gaps by reducing the depth of the filling holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the contact hole extends into the substrate to increase the surface area of the second contact region, then the contact area between the wire and the second contact region is increased, but the wire is prone to voids or gaps which affects the yield
Solution Approach 1:
A bump structure is introduced as an intermediary between the wire and the second contact region. The bump serves as a mediator that increases the contact area while providing a reliable bonding interface that prevents voids and gaps in the wire connection
Solution Approach 2:
The bump structure is formed on the second contact region before the wire is filled into the contact hole. This preliminary formation of the bump ensures that when the wire is subsequently deposited, it has a pre-prepared surface with adequate contact area, reducing the risk of voids
2Area of moving object
If the contact hole is made deeper to increase contact area, then the wire-bump contact area is increased, but the complexity of the fabrication process increases
Solution Approach 1:
Instead of increasing the depth of the contact hole (vertical dimension), the solution introduces a bump structure that extends the contact surface in a different dimensional approach. The bump protrudes from the substrate surface, providing additional contact area without requiring the wire to traverse a deeper hole
Data Source
AI summary
The present disclosure provides a method of manufacturing a semiconductor memory and a semiconductor memory, and relates to the technical field of storage devices. The method of manufacturing the semiconductor memory includes: providing a substrate, where multiple active regions arranged at intervals are provided in the substrate; each of the active regions includes a first contact region and second contact regions; forming a bump on each of the second contact regions; forming multiple bit line (BL) structures arranged at intervals on the substrate; forming a first isolation layer covering the BL structures and covering the substrate, where multiple filling holes are provided in the first isolation layer; and forming a wire in each of the filling holes, the wire being electrically connected to the bump.