Fuse Doped Region Layout for Stable DRAM Resistance Reading

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Solution Overview

Problem

DRAM manufacturers face challenges with misjudgment in read and write operations due to the negative temperature dependence of resistance in hopping type fuses, leading to higher resistance deviations.

Innovation Solution

Incorporating a resistance modification doped region with a specific conductive type within the well region to convert the fuse to an ohmic type fuse, ensuring positive temperature dependence and reduced resistance deviation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If a hopping type fuse is used in DRAM, then the fuse can be blown at lower currents, but the resistance exhibits negative temperature dependence leading to misjudgment in read/write operations

Engineering Contradiction:

Improveblow currentVSAvoidoperational accuracy

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent introduces a resistance modification doped region with a specific conductive type (first conductive type) that is different from the well region (second conductive type). This creates a localized region with modified electrical properties that transforms the overall fuse behavior from hopping type to ohmic type, thereby changing the temperature dependence of resistance from negative to positive while maintaining the low blow current characteristic

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent modifies the resistance characteristics of the fuse by changing the doping parameters - specifically introducing a resistance modification doped region with controlled doping concentration and conductive type. This parameter change transforms the temperature dependence of resistance, converting the fuse from hopping type (negative temperature coefficient) to ohmic type (positive temperature coefficient), thus improving operational reliability

Inventive Principle:

Principle #35Parameter changes

2Productivity

If a hopping type fuse is used, then the device can operate at lower currents, but the resistance deviation increases causing misjudgment

Engineering Contradiction:

Improveoperating currentVSAvoidresistance measurement accuracy

Core Design Contradiction:

ProductivityVSMeasurement precision

Solution Approach 1:

The resistance modification doped region creates a localized zone with specific electrical properties that dominate the overall resistance behavior. By controlling the conductive type and doping characteristics of this region, the patent ensures that the fuse exhibits ohmic behavior with positive temperature dependence, thereby improving measurement precision while maintaining low operating currents

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent changes the resistance parameters of the fuse structure by introducing a doped region with specific doping concentration and conductive type. This transforms the resistance-temperature relationship, reducing resistance deviation and improving the accuracy of resistance measurements during read/write operations

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The ohmic type fuse reduces misjudgment in read and write operations by maintaining consistent resistance with temperature changes, improving operational accuracy.

Implementation Method 1

a resistance modification doped region partially overlapping the fuse doped region. The fuse doped region and the resistance modification doped region have a first conductive type

Methodology Applied

Scientific EffectDoping: Dopants

Data Source

PatentUS20260020261A1Semiconductor device with resistance modification doped region and method for fabricating the same

Publication Date: 2026.01.15 NAN YA TECH

AI summary

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a well region positioned within the substrate; an isolation structure positioned in the well region; a fuse medium positioned over the well region; a gate electrode positioned over the fuse medium; a fuse doped region positioned under the fuse medium and within the well region; a source/drain region positioned adjacent to the fuse doped region; and a resistance modification doped region partially overlapping the fuse doped region. The fuse doped region and the resistance modification doped region have a first conductive type and the well region has a second conductive type different from the first conductive type.