DRAM Self-Refresh Skip Control for Short Idle Intervals

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Solution Overview

Problem

Existing semiconductor memory devices, such as DRAM, face issues with unnecessary self-refresh operations due to frequent and short-duration self-refresh entry and exit commands, leading to logic errors and increased power consumption.

Innovation Solution

A semiconductor memory device with a self-refresh skip circuit that autonomously determines the duration between self-refresh entry and exit commands, skipping operations when the duration is shorter than a reference time, thereby reducing unnecessary self-refresh operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the DRAM device performs self-refresh operation frequently based on self-refresh entry commands, then data retention is maintained, but unnecessary operations occur leading to logic errors and increased power consumption

Engineering Contradiction:
Improvedata retentionVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent introduces a timer that starts counting from the moment a self-refresh entry command is received. This preliminary timing action allows the system to evaluate whether the self-refresh operation should be executed or skipped based on the duration between entry and exit commands, preventing unnecessary operations while ensuring data retention when needed.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the parameter of command duration by introducing a reference time threshold. When the duration between self-refresh entry and exit commands is shorter than this reference time, the system determines that the operation is unnecessary and skips it. This parameter-based decision-making reduces power consumption while maintaining data retention reliability.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If self-refresh operations are performed repeatedly without considering duration, then data retention is maintained, but logic errors occur due to unnecessary operations

Engineering Contradiction:
Improvedata retentionVSAvoidlogic errors
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The timer starts counting immediately when a self-refresh entry command is received, creating a preliminary evaluation period. This allows the system to check whether the corresponding exit command arrives within the reference time, and only then execute the self-refresh operation, thereby preventing logic errors from unnecessary repeated operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

By introducing the reference time parameter and comparing the actual duration against it, the system makes intelligent decisions about whether to execute self-refresh operations. This parameter-based approach filters out unnecessary operations that would cause logic errors while preserving data retention functionality.

Inventive Principle:
Principle #35Parameter changes

3Loss of energy

If the system adds duration checking logic to skip unnecessary self-refresh operations, then power consumption and logic errors are reduced, but device complexity increases

Engineering Contradiction:
Improvepower consumptionVSAvoidcontrol circuit complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent merges the timer functionality with the existing refresh control circuitry. The timer is integrated into the control circuit that manages self-refresh operations, combining timing functions with control logic. This merging approach reduces overall device complexity compared to having separate independent timing circuits, while still achieving power savings through duration-based decision making.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12626747B2Semiconductor memory device selectively performing self-refresh operation and self-refresh method thereof
Publication Date: 2026.05.12 SAMSUNG ELECTRONICS CO LTD
  • US12626747B2 patent drawing
  • US12626747B2 patent drawing
  • US12626747B2 patent drawing

AI summary

A self-refresh method of a semiconductor memory device includes: receiving a self-refresh entry command associated with a self-refresh operation; counting an elapsed time from a time of receiving the self-refresh entry command; and skipping the self-refresh operation depending on whether a self-refresh exit command is received before the counted elapsed time exceeds a reference time.