DRAM Temperature Sensing Circuit for Adaptive Refresh and Power Control
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Solution Overview
Problem
Semiconductor devices face inefficiencies due to temperature-dependent characteristics, leading to unnecessary power consumption and performance degradation, as they are often designed for worst-case temperature scenarios, resulting in wasted power and reduced battery life in mobile devices.
Innovation Solution
Incorporating a temperature sensing circuit with variable resistors and counters that adjust performance parameters based on temperature ranges, allowing the semiconductor device to optimize operations across a wide temperature range without excessive power usage or performance loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If circuits are designed for worst case temperature corners, then reliability is improved, but power consumption increases
Solution Approach 1:
The patent implements dynamic adjustment of circuit operating parameters based on real-time temperature sensing. The system transitions from static worst-case design to dynamic adaptation, where refresh rates, voltage levels, and timing parameters are continuously optimized according to actual temperature conditions, thereby reducing power consumption while maintaining reliability
Solution Approach 2:
The patent changes physical operating parameters (refresh rate, voltage, timing) based on temperature measurements. By adjusting these parameters dynamically rather than fixing them for worst-case scenarios, the system achieves both reliability and power efficiency across different temperature conditions
2Reliability
If refresh operation frequency is increased to meet high temperature specifications, then reliability is improved, but power consumption increases
Solution Approach 1:
The patent dynamically adjusts the refresh rate parameter based on temperature sensing. At low temperatures where charge degradation is slower, the refresh rate is reduced below the worst-case maximum, thereby reducing power consumption while still maintaining data integrity. At high temperatures, the refresh rate increases to meet specification requirements
3Reliability
If power supply voltage is increased to meet worst case specifications, then reliability is improved, but power consumption increases
Solution Approach 1:
The patent implements dynamic voltage scaling based on temperature conditions. Rather than maintaining a fixed high voltage to satisfy worst-case low-temperature specifications, the system adjusts voltage levels according to actual temperature, reducing power consumption (P=IV) when high voltage is not needed for reliable operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables semiconductor devices to maintain functionality and efficiency across varying temperatures without the need for excessive power consumption, thereby extending battery life and optimizing performance.
Implementation Method 1
a temperature sensing circuit can include at least one variable resistor that can set a temperature range
Implementation Method 2
A counter may incrementally change in accordance with a temperature of the semiconductor device changing outside of the bounds of the range
Implementation Method 3
The resistance value of the at least one variable resistor can change in response to the count output of the counter
Data Source
AI summary
A method of operating a semiconductor device can include providing a multi-bit count value to a temperature sensing circuit; and generating an output having a detect logic level from the temperature sensing circuit based on an internal temperature of the semiconductor device and the count value. In some embodiments, a semiconductor device can be a dynamic random access memory (DRAM) device.