Thermometers Using Electric/Magnetic Elements TRIZ Cases

A chirp-driven resonance circuit measures gate resistance accurately despite parasitic inductance, capacitance, and ringing.

Dynamically switched LDOs spread power delivery across the SoC die to cut localized hot spots, lower power use, and sustain peak performance.

SAR feedback and dynamic element matching improve diode temperature sensing accuracy while cutting mismatch error, conversion time, and power.

Separating the oscillation circuit from intermittent temperature sensing with an intervening power supply block cuts noise and preserves signal quality.

Partial substrate release and serpentine thermistor shapes reduce stress-induced resistance error for stable, accurate MEMS temperature sensing.

Device-specific correction parameters let a DSP generate accurate PWM-based analog sensor outputs while avoiding complex D/A converter circuits.

A variable resistance circuit corrects temperature detection voltage offset, improving oscillator temperature compensation and reducing frequency deviation.

A multiplier and temperature coefficient element amplify small thermal changes into detection current while limiting thermal runaway risk.

A non-conducting die is probed with a current-limited gate voltage to infer junction temperature without intrusive sensors or extra hardware.

Higher-order target temperature correction cancels nonlinear heater-current errors, improving quartz oscillator frequency stability.

A DAC-set bias voltage cancels nominal thermopile output, enabling higher-gain low-voltage IR readout without amplifier or ADC saturation.

An oscillator with feedback-controlled resistance keeps output linear from −40°C to 250°C while reducing calibration and power use.

Temperature-aware reference signal calibration prevents false touch events when ultrasonic sensing signals drift after cooling.

Digital reference calculation compensates temperature and mechanical stress, enabling accurate absolute voltage measurement without a stable analog reference.

Separating upper-bit coarse tuning and lower-bit fine tuning cuts oscillator compensation circuit area while preserving frequency adjustment resolution.

A shared I/O cell pair and switching circuit let two external resonators serve separate oscillators while reducing pin usage and layout constraints.

A temperature-dependent bias current drives ring oscillator frequency, enabling IC thermal monitoring and dynamic performance control.

Alternating constant-current and PTAT bias modes lets a ring oscillator use frequency ratios to measure chip temperature with low supply-voltage sensitivity.

A count-driven temperature sensing circuit lets DRAM adjust refresh, voltage, and timing by temperature to cut worst-case power waste.

Using oscillator resistance control and a reference resistor, this case keeps temperature output linear from -40°C to 250°C with low power.

Dual temperature sensors and digital control help an OCXO correct resonator and ambient thermal shifts for more stable frequency output.

Stored correction parameters let a digital PWM sensor output accurate analog voltage or current while avoiding complex D/A converter circuitry.

Two temperature-frequency measurements build a 3rd-order crystal model that cuts TCXO calibration time and improves frequency stability.

Using two oscillation periods, this circuit cancels temperature-dependent delay and avoids a bandgap reference for accurate sensing.

A VT-dependent MOSFET resistor offsets thermal-voltage drift in RF log power detectors, stabilizing amplifier output across temperature.

Rising leakage at high temperature is offset by boosting oscillator frequency through temperature-dependent bias current, limiting voltage droop.

Two calibration-point measurements build a 3rd-order crystal model that corrects quartz oscillator frequency while cutting TCXO calibration time and cost.

Uses power loss, thermal resistance, coolant flow, and staged time constants to predict power module junction temperature more accurately.

A temperature sensor beside a non-TCXO crystal lets the controller estimate drift and correct wireless clock and frequency translation errors.

A V-groove dual-mode MEMS resonator combines fundamental and overtone modes to cut filter footprint and improve thermal sensing.

Gate-voltage sensing during non-conducting cycles enables real-time junction temperature measurement of parallel power-module dies without extra sensors.

Magnetoresistive sensing replaces shunts and sense transistors to measure switch current more accurately across wide ranges and support overcurrent monitoring.

Diode-connected CMOS transistors make inverter delay track temperature linearly, boosting ring-oscillator sensitivity in small digital circuits.

Dual on-chip oscillators and internal logic measure chip temperature from frequency ratios, avoiding unstable or costly external clock references.

Using a secondary resonant peak, this oscillator circuit measures fast temperature transients without phase lag and supports rapid calibration.

Frequency division averages supply-noise cycles so ring oscillator readings track temperature more accurately in noisy voltage environments.

Compensates output-limiting diode voltage drop in IGBT temperature sensing by calculating diode current and restoring signal accuracy.

Diode-connected PMOS and NMOS stages make inverter propagation delay vary linearly with temperature for compact, accurate digital thermal sensing.

Specific current ratios cancel base and emitter resistance errors in VBE-based temperature sensing, enabling accurate readings without extra device data.

Real-time speaker temperature sensing lowers audio signal amplitude only as needed to prevent overheating in compact multimedia devices.

Gain-bandwidth switching selects resonant peaks for real-time temperature measurement and calibration without phase lag during fast transients.

Opposite-sign amplification aligns input and reference signals to the ADC scale, improving conversion accuracy without higher bit count.

A DC bias and current-sensing circuit estimates speaker coil temperature without complex voltage detection, helping prevent overheating and burnout.

Four sequential current levels cancel base and emitter resistance errors in IC temperature sensing, improving measurement accuracy.

Pulse-count thresholds tune ring oscillator delay elements for accurate chip temperature sensing without counter saturation or added sensor area.

A switched-capacitor feedback loop linearizes a VCO-based ADC to improve on-chip temperature sensing without added calibration circuitry.

A latched storage capacitor removes residual EMF before conversion, improving temperature measurement accuracy without slowing transmitter updates.

Temperature-range sensing with counters adjusts voltage, timing, and refresh settings to avoid worst-case power waste across operating conditions.

Using two co-located sensors with different thermal properties, this case corrects RTD and lead-wire temperature errors for precise readings.