Temperature Sensing Circuit for Semiconductor Power and Timing Control
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Solution Overview
Problem
Semiconductor devices face inefficiencies due to temperature-dependent characteristics, leading to unnecessary power consumption and performance degradation, as they are often designed for worst-case temperature scenarios, resulting in wasted power and reduced battery life in mobile devices.
Innovation Solution
Incorporating a temperature sensing circuit with variable resistors and counters that adjust operational parameters based on temperature ranges, allowing the semiconductor device to optimize performance without excessive power consumption across varying temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor devices are designed for worst-case temperature corners to ensure specifications are met, then reliability is improved, but power consumption increases unnecessarily
Solution Approach 1:
The patent implements dynamic parameter adjustment by introducing temperature sensing circuits that continuously monitor device temperature and automatically adjust operational parameters (such as refresh frequency in DRAM, voltage levels, and timing margins) to match current thermal conditions. This replaces static worst-case design with adaptive real-time optimization, ensuring specifications are met only when necessary while reducing power consumption during normal operation.
Solution Approach 2:
The patent changes operational parameters based on temperature conditions by using temperature-dependent circuits that modify device behavior. For example, refresh intervals are extended at lower temperatures where charge retention is better, and timing parameters are adjusted according to carrier mobility changes with temperature. This parameter adaptation resolves the contradiction by maintaining reliability through specification compliance only when thermal conditions require it.
2Reliability
If refresh frequency is increased to meet high-temperature specifications, then reliability is improved, but power consumption increases at low temperatures
Solution Approach 1:
The patent implements dynamic refresh frequency adjustment by monitoring temperature and adapting refresh intervals accordingly. At high temperatures where charge degradation is faster, refresh frequency increases to maintain data integrity. At low temperatures where charge retention is naturally better, refresh frequency decreases, reducing power consumption while maintaining reliability. This dynamic adaptation resolves the contradiction between charge retention requirements and power consumption.
3Speed
If voltage is increased to meet fast corner specifications, then speed is improved, but power consumption increases unnecessarily
Solution Approach 1:
The patent implements voltage scaling based on temperature conditions by using temperature sensing circuits that adjust supply voltage levels dynamically. At high temperatures where carrier mobility decreases, voltage is increased to maintain switching speed and meet timing specifications. At low temperatures where mobility is higher, voltage can be reduced while maintaining the same performance, thereby reducing power consumption (P=IV). This parameter adaptation resolves the contradiction between speed requirements and power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables semiconductor devices to maintain functionality and efficiency across a wide temperature range without unnecessary power wastage, thereby extending battery life and optimizing performance.
Implementation Method 1
Incorporating a temperature sensing circuit with variable resistors and counters that adjust operational parameters based on temperature ranges
Data Source
AI summary
A semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at other operating temperatures. The temperature sensing circuit may provide a plurality of temperature ranges for setting the operational parameters. Each temperature range can include a temperature range upper limit value and a temperature range lower limit value and adjacent temperature ranges may overlap. The temperature ranges may be set in accordance with a count value that can incrementally change in response to the at least one temperature sensing circuit.