Variable-Resistance Temperature Sensor for Precise Offset Correction
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Solution Overview
Problem
Existing temperature sensors used in oscillators face challenges in accurately correcting the offset of temperature detection voltage, leading to inaccuracies in temperature compensation and frequency deviation, particularly due to the lack of effective methods for high-accuracy offset correction with simple circuit configurations.
Innovation Solution
A temperature sensor configuration that includes a bipolar transistor, a resistor, and a variable resistance circuit between the emitter node and ground, allowing for precise adjustment of the temperature detection voltage offset using zeroth-order correction data stored in non-volatile memory, thereby improving temperature compensation accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a simple circuit configuration is used for temperature detection, then device complexity is reduced, but offset correction accuracy deteriorates
Solution Approach 1:
The patent applies the Dynamics principle by introducing a variable resistance circuit that can dynamically adjust its resistance value to correct the offset of the temperature detection voltage. The circuit transitions from a static resistance configuration to a dynamic one where the resistance can be varied based on stored correction data, enabling offset correction without increasing overall circuit complexity.
Solution Approach 2:
The patent implements Parameter changes by modifying the resistance value of the variable resistance circuit based on zeroth-order correction data stored in non-volatile memory. This allows the circuit to adjust the temperature detection voltage offset by changing the resistance parameter, achieving high-accuracy offset correction while maintaining a relatively simple circuit structure.
2Measurement precision
If offset correction is implemented with high accuracy, then temperature compensation precision is improved, but device complexity increases
Solution Approach 1:
The patent applies the Preliminary action principle by pre-storing zeroth-order correction data in non-volatile memory during the manufacturing process. This preliminary action allows the offset correction to be performed simply by retrieving and applying the pre-calculated correction values, avoiding the need for complex real-time calculation circuits while achieving high temperature compensation accuracy.
Solution Approach 2:
The patent uses the variable resistance circuit as an intermediary element between the stored correction data and the temperature detection voltage. This intermediary component translates the digital correction data into analog resistance changes, thereby correcting the voltage offset without requiring direct complex circuitry in the temperature sensing path.
3Adaptability or versatility
If a variable resistance circuit is added for offset correction, then offset correction capability is improved, but device complexity increases
Solution Approach 1:
The patent implements the Universality principle by designing the variable resistance circuit to serve multiple functions: it acts as part of the temperature detection circuit while simultaneously providing offset correction capability. The circuit can operate in different modes depending on the applied voltage, enabling both temperature sensing and offset correction with a single component, thereby improving adaptability without proportionally increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high-accuracy offset correction of the temperature detection voltage, reducing frequency deviation and enhancing the accuracy of temperature compensation in oscillators, ensuring stable and precise temperature-dependent performance.
Implementation Method 1
A forward voltage has temperature characteristics in a PN junction of a semiconductor, and a temperature sensor using the temperature characteristics is known.
Data Source
AI summary
Provided is a temperature sensor including a bipolar transistor, a resistor, and a variable resistance circuit. The resistor is provided between a first node coupled to a base node of the bipolar transistor and a collector node of the bipolar transistor. The variable resistance circuit is provided between an emitter node of the bipolar transistor and a ground node.