Driving Backplane Via Conduction Using Induced Polysilicon Channels
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Solution Overview
Problem
Current LTPS display panels face defects in conductivity due to failures in thin film transistors, which hinder the formation of conductive semiconductor materials within via holes, preventing effective connection to other layers.
Innovation Solution
A method for preparing a driving backplane involves forming a connecting layer, an insulating layer group with a via hole, and a doped amorphous silicon layer to create a conductor part and channel part, where inducing particles facilitate the growth of polysilicon nanowires without requiring excimer laser annealing or doping processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional thin film transistor fabrication is used, then the display panel achieves ultra-thin and light weight, but conductivity defects occur due to failure to form conductive semiconductor materials in via holes
Solution Approach 1:
Inducing particles are introduced as intermediary elements within the via hole to facilitate the formation of conductive polysilicon nanowires. These particles serve as nucleation sites that enable spontaneous crystallization of amorphous silicon into conductive polysilicon structures, resolving the conductivity defect without requiring complex additional processing steps
Solution Approach 2:
The invention changes the physical and chemical parameters of the via hole environment by introducing inducing particles with specific properties (size, material composition, surface characteristics). This parameter change triggers a phase transition from non-conductive amorphous silicon to conductive polysilicon nanowires, ensuring reliable electrical connection
2Reliability
If excimer laser annealing and doping processes are used, then conductive polysilicon can be formed, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The invention extracts and removes the complex excimer laser annealing and doping processes from the manufacturing flow. By using inducing particles that enable spontaneous polysilicon formation during standard annealing, the patent eliminates the need for these specialized high-complexity process steps while maintaining conductivity reliability
Solution Approach 2:
The inducing particles enable the amorphous silicon to self-organize and crystallize into conductive polysilicon nanowires through spontaneous nucleation and growth. This self-service mechanism occurs during routine thermal annealing processes, eliminating the need for external intervention through complex laser annealing or ion implantation steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures reliable connection of the active layer to other layers through the conductor part, preventing conductivity defects and enhancing the performance of thin film transistors in LTPS display panels.
Implementation Method 1
forming a first channel part by causing the inducing particles to induce the raw material part
Data Source
AI summary
A method for preparing a driving backplane includes: providing a base substrate, forming a connecting layer on a side of the base substrate; forming an insulating layer group on a side of the connecting layer away from the base substrate, forming a first via hole by patterning the insulating layer group; forming inducing particles on a side of the insulating layer group away from the base substrate; forming a doped amorphous silicon layer on a side of the inducing particles away from the base substrate, forming a first conductor part by the doped amorphous silicon layer formed in the first via hole, forming a raw material part by patterning the doped amorphous silicon layer; and forming a first channel part by causing the inducing particles to induce the raw material part, wherein the first channel part is connected to the first conductor part.