Dry Etching Apparatus Using Bidirectional Voltage for Material Versatility
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Solution Overview
Problem
Conventional dry etching methods are limited by their reliance on chemical processes and are not applicable to various materials, leading to increased process complexity and redeposition issues.
Innovation Solution
A dry etching apparatus utilizing a bidirectional voltage source with alternating polarity, a distance adjusting unit, and a temperature control system to position the work piece close to a cathode unit, applying a DC voltage to the anode unit to reduce ion hitting time and increase electron hitting time, preventing redeposition and allowing etching of diverse materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional dry etching method using chemical processes is used, then etching can be performed on certain materials, but the number of processes increases and material applicability is limited
Solution Approach 1:
The patent changes the fundamental etching mechanism from chemical reactions to physical sputtering by applying RF power to generate plasma. This parameter change allows etching of diverse materials without requiring different chemical processes, thereby improving material applicability while simplifying the overall process flow
Solution Approach 2:
The patent replaces the chemical etching mechanism with a physical plasma-based sputtering mechanism. By using ion bombardment and physical ejection of material atoms, the system achieves universal material etching capability without relying on material-specific chemical reactions, thus reducing process complexity
2Productivity
If a conventional dry etching method is used, then etching can be performed, but redeposition occurs and etching time is increased
Solution Approach 1:
The patent employs periodic RF power application to the plasma generation unit, creating cyclic plasma discharge that alternates between high-density plasma phases and lower-density phases. This periodic action prevents continuous redeposition by clearing ejected atoms during low-density phases while maintaining high etching rates during high-density phases
Solution Approach 2:
The patent dynamically adjusts the RF power level and plasma density during the etching process to optimize the balance between etching rate and redeposition control. By making the plasma conditions dynamic rather than static, the system can adapt to prevent redeposition while maintaining high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus significantly reduces etching time, improves productivity, and enables clean etching on various materials without redeposition, maintaining precise temperature control to minimize process temperature differences and prevent hardening of photoresist.
Implementation Method 1
a bidirectional voltage source supply unit configured to apply the bidirectional voltage source to the cathode unit
Implementation Method 2
a bidirectional voltage source of which the voltage polarity alternates between a positive voltage and a negative voltage with time
Implementation Method 3
A DC voltage source application unit configured to apply a DC voltage source to the anode unit in order to decrease an ion hitting time required for the work piece while increasing an electron hitting time required for the work piece
Implementation Method 4
a spring positioned outside the first member, and configured to elastically support the second member against the fixed piece
Data Source
AI summary
The present invention relates to a dry etching apparatus which can be applied regardless of materials. The dry etching apparatus may include: an anode unit; a cathode unit configured to receive a bidirectional voltage source of which the voltage polarity alternates between a positive voltage and a negative voltage with time, and separated from the anode unit; a positioning unit configured to position a work piece at a surface of the cathode unit, facing the anode unit; and a bidirectional voltage source supply unit configured to apply the bidirectional voltage source to the cathode unit.