Electric Discharge Tubes TRIZ Cases

A micro-zone electrostatic chuck uses segmented ceramic heaters to hold substrate temperature profiles with high precision.

Pulse plasma drilling generates chemical signatures from rock interaction, enabling accurate real-time formation evaluation without complex mechanical logging.

A multi-aperture plate and selector generate multiple charged particle beams, ensuring uniform resolution despite beam quality variations.

Sealing members protect bonding layers from radicals and heat transmitting gases, maintaining structural integrity during plasma processing.

A bus interconnect system with multiple ports transfers data between a host and an RF generator, eliminating packetization overhead to boost speed.

Nonlinear contact finger edges distribute mechanical stress to prevent die cracking, while angled plating traces avoid detachment from host device pins.

Segmenting the sample into an initial and planar lamella provides orthogonal cross-sectional views of internal structures within semiconductor devices.

Plasma oxidation processing prevents high-k gate insulating film crystallization, suppressing leak current and controlling metal gate electrode resistance.

A collimator and guidance magnetic field filter metal ions to prevent overhangs and ensure complete trench filling.

Automated aberration correction system for charged particle beam devices.

Interposing a spacer between the discharge tube and nozzle blocks heat conduction, preventing nozzle deterioration from plasma generator temperatures.

Asymmetric magnetron poles create a controlled magnetic unbalance ratio to distribute plasma density evenly across the sputtering target surface.

Three independent objective lenses resolve the trade-off between resolution and field of view by enabling dynamic mode selection.

A vacuum vessel with a movable wall portion and port enables flexible port rearrangement while maintaining high vacuum integrity.

A high-resistance layer enables current flow between electrical contacts to shape charged particle beams with precise potential control.

Segmented high-energy and low-energy milling stages control lamella thickness with less than 2% error while removing ion-induced damage.

Through-holes in a gas supply unit adjust flow rates to resolve non-uniform film thickness at substrate edges and centers.

Segmented electrodes attract the tray in the concave region to prevent overheating, maintaining wafer temperature uniformity and etching yield.

Horizontal PCB segmentation reduces mating interface height while maintaining signal transmitting speed.

Segmented lock mechanism positions rubbing interface away from the substrate path, preventing dust contamination during high-pressure processing.

Segmented RF electrodes generate plasma on lens surfaces, replacing degradable coatings that lose hydrophilicity and cause weather blur.

A cover layer with a secondary electron emission coefficient below one reduces electron emission from the upper electrode surface.

Silicon carbide crucibles prevent carbon contamination during heat treatment, ensuring stable hafnium carbide powder for plasma electrodes.

Two-level terminal staggering and zigzag adhesive barriers resolve USB 3.0 impedance instability and soldering interference.

Plasma-assisted conditioning cleans extraction electrodes to reduce glitch rates caused by material buildup from fluoride gases.

Segmented channels with variable spacing provide uniform temperature control across high-power-density workpieces.

Integrated fuse mounts on terminal base eliminate separate protection hardware, reducing manufacturing costs while protecting against voltage fluctuations.

A base with an extension member transmits electric signals to a detection apparatus, enabling wider heart area coverage while maintaining portability.

Ferromagnetic magnetic shield intercepts leakage magnetic field from permanent magnet, preventing electron beam curvature during ion milling.

Infrared absorption diagnostic system measures polyatomic molecule dissociation in remote plasma source process gases.

Segmented convex portions concentrate stress to break dense insulating films, preventing substrate damage while ensuring reliable electrical connection.

A dry etching apparatus applies alternating polarity voltage to a cathode unit to accelerate ions and electrons toward the work piece.

Alternating oxygen and chlorine plasma steps etch ruthenium films while atomic layer deposition forms a protective film to suppress in-plane variations.

Azimuthal magnet arrangement surrounds sputtering target to trap electrons, resolving limited plasma concentration from field penetration.

A plasma processing controller adjusts bias radio-frequency power using a focus ring DC potential table to specify the required power level.

A central and adjustable peripheral electrostatic chuck system handles multiple workpiece diameters, eliminating the need for dedicated hardware per size.

A plasma etching method uses a gas mixture to generate a deposited film containing Si—O bonding on silicon oxide surfaces.

A gallium nitride sintered body with controlled density and low oxygen content serves as a robust substrate for thin film deposition.

Segmented shield with distinct wavy fin configurations reduces potential difference to the grounded shield while minimizing re-sputtering contamination.

Clamp with outwardly extending shelf prevents isolator ring sticking during chamber opening.

Segmented field insulation layers with varying widths suppress short channel effects while maintaining carrier mobility in dense multi-gate transistors.

Gear and pin mechanisms align baseplates in nested cavities to eliminate gaps that cause plasma arcing.

A heated chuck emits thermal radiation to preheat a semiconductor workpiece at a controlled distance before clamping.

Segmented gas injection points deliver incompatible gases independently to prevent premature chemical reactions in the supply lines.

Replacing scintillator-photomultiplier systems with solid state detector arrays reduces noise and distortion in quantitative secondary electron detection.

A plasma processor susceptor generates secondary plasma to supply radicals directly to the wafer periphery.

A plasma generator uses a spark mechanism to ionize gas before RF ignition, storing charged particles on an insulating container wall.

A rectangular magnet unit with a third magnet enhances leakage magnetic flux density on the target surface.

Opposing positioning mechanisms stabilize the placing table against thermal expansion in substrate processing chambers.

A vertically divided plasma processing chamber uses elevating and fixing mechanisms to enable selective component detachment.