Semiconductor Fin Field Insulation Layer Segmentation
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling integration density and effectively suppressing short channel effects while maintaining improved current control and carrier mobility, particularly in multi-gate transistors with three-dimensional channels.
Innovation Solution
The semiconductor device design includes fins with a field insulation layer comprising multiple insulation layers of different widths, a gate intersecting one fin, and a dummy gate on the insulation layer, with the second insulation layer being wider than the first, allowing for improved electrical isolation and carrier mobility by controlling the ratio of top to bottom fin widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistors with three-dimensional channels are used to increase integration density, then integration density is improved, but short channel effects become more severe
Solution Approach 1:
The field insulation layer is segmented into multiple insulation layers with different widths, creating a stepped structure that provides better electrical isolation between adjacent fins while maintaining effective channel control, thereby suppressing short channel effects in high-density integrated devices
Solution Approach 2:
Different regions of the field insulation layer have different widths to provide localized electrical isolation where needed most, with wider portions providing stronger isolation between fins while maintaining narrower portions where channel control is critical
2Productivity
If fins are made narrower to increase integration density, then integration density is improved, but carrier mobility deteriorates
Solution Approach 1:
The field insulation layer provides localized electrical isolation that stabilizes the electric field distribution around each fin, maintaining favorable conditions for carrier transport even as fins become narrower and more closely spaced, thereby preserving carrier mobility in high-density configurations
3Reliability
If multiple insulation layers with different widths are used, then electrical isolation and carrier mobility are improved, but device complexity increases
Solution Approach 1:
The field insulation layer is divided into multiple insulation layers with different widths that can be formed through sequential deposition and patterning processes, providing enhanced electrical isolation while maintaining compatibility with standard semiconductor manufacturing workflows
Solution Approach 2:
The multiple insulation layers are designed with asymmetric width relationships (second insulation layer wider than the first), creating a stepped structure that optimizes electrical isolation between fins while maintaining manufacturability through controlled asymmetric patterning
Data Source
AI summary
Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.